BLF6G13L-250P,112 NXP

BLF6G13L-250P BLF6G13LS-250P Power LDMOS transistor Rev. 3 14 October 2011 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Test information Typical RF performance at T =25 C I = 100 mA in a class-AB production test circuit. case Dq Mode of operation f V P G DS L(1dB) p D (GHz) (V) (W) (dB) (%) CW 1.3 50 250 17 56 1.2 Features and benefits Typical CW performance at a frequency of 1.3 GHz, a supply voltage of 50 V, an I of Dq 100 mA: Output power = 250 W Power gain = 17 dB Efficiency = 56 % Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Industrial, scientific and medical applicationsBLF6G13L-250P BLF6G13LS-250P NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF6G13L-250P (SOT1121A) 1drain1 1 2 1 2drain2 3gate1 3 4gate2 5 5 4 1 5source 3 4 2 sym117 BLF6G13LS-250P (SOT1121B) 1drain1 1 2 1 2drain2 3gate1 5 3 4gate2 5 4 1 5source 3 4 2 sym117 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF6G13L-250P - flanged LDMOST ceramic package 2 mounting SOT1121A holes 4 leads BLF6G13LS-250P - earless flanged LDMOST ceramic package 4 leads SOT1121B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 100 V DS V gate-source voltage 0.5 +13 V GS I drain current - 42 A D T storage temperature 65 +150 C stg T junction temperature - 200 C j BLF6G13L-250P 6G13LS-250P All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 14 October 2011 2 of 14