BLS6G2731S-120,112 NXP

BLS6G2731-120 BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 2 1 September 2015 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at T = 25 C t = 100 s = 10 % I = 100 mA in a class-AB case p Dq production test circuit. Mode of operation f V P G t t DS L p D r f (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 2.7 to 3.1 32 120 13.5 48 20 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an I of 100 mA, a t of 100 s with of 10 %: Dq p Output power = 120 W Power gain = 13.5 dB Efficiency = 48 % Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2.7 GHz to 3.1 GHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)BLS6G2731-120 BLS6G2731S-120 LDMOS S-band radar power transistor 1.3 Applications S-band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency range 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLS6G2731-120 (SOT502A) 1 drain 1 1 2 gate 3 1 3 source 2 2 3 sym112 BLS6G2731S-120 (SOT502B) 1 drain 1 1 2 gate 3 1 3 source 2 2 3 sym112 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLS6G2731-120 - flanged LDMOST ceramic package 2 mounting holes SOT502A 2 leads BLS6G2731S-120 - earless flanged LDMOST ceramic package 2 leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit V drain-source voltage - 60 V DS V gate-source voltage 0.5 +13 V GS I drain current - 33 A D T storage temperature 65 +150 C stg T junction temperature - 225 C j BLS6G2731-120 6G2731S-120 2 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 2 1 September 2015 2 of 13