BLS6G2731S-130,112 NXP

BLS6G2731S-130 LDMOS S-band radar power transistor Rev. 3 1 September 2015 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at T =25 C t = 300 s = 10 % I = 100 mA in a class-AB case p Dq production test circuit. Mode of operation f V P G t t DS L p D r f (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 2.7 to 3.1 32 130 12 50 20 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an I of 100 mA, a t of 300 s with of 10 %: Dq p Output power = 130 W Power gain = 12 dB Efficiency = 50 % Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2.7 GHz to 3.1 GHz) Internally matched for ease of use Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC 1.3 Applications S-band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency rangeBLS6G2731S-130 LDMOS S-band radar power transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1drain 1 1 2gate 3 1 3source 2 2 3 sym112 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLS6G2731S-130 - ceramic earless flanged cavity package 2 leads SOT922-1 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit V drain-source voltage - 60 V DS V gate-source voltage 0.5 +13 V GS I drain current - 33 A D T storage temperature 65 +150 C stg T junction temperature - 200 C j 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Z transient thermal impedance from junction T =85 C P = 130 W th(j-mb) case L to mounting base t = 100 s = 10 % 0.23 K/W p t = 200 s = 10 % 0.28 K/W p t = 300 s = 10 % 0.32 K/W p t = 100 s = 20 % 0.33 K/W p BLS6G2731S-130 3 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 1 September 2015 2 of 12