Product Information

BF991,215

BF991,215 electronic component of NXP

Datasheet
RF MOSFET Transistors N-CH DUAL GATE 20V VHF
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2957 ea
Line Total: USD 0.3

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 0.2957
5 : USD 0.2837
250 : USD 0.2716
1000 : USD 0.2595

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Transistor Type
Brand
Product Type
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
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Additional Infomation About Product

BF991 N-channel dual-gate MOS-FET Rev. 03 20 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. NXP Semiconductors Product specication N-channel dual-gate MOS-FET BF991 FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back diodes between gates microminiature package with interconnected source and source. and substrate. APPLICATIONS handbook, halfpage d VHF applications such as: 43 VHF television tuners and FM tuners g 2 Professional communication equipment. g 1 PINNING PIN SYMBOL DESCRIPTION 1 2 s,b 1 s, b source Top view MAM039 2 d drain 3g gate 2 2 Marking code: %MA. 4g gate 1 1 Fig.1 Simplified outline (SOT143) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V drain-source voltage - 20 V DS I drain current - 20 mA D P total power dissipation up to T =60 C - 200 mW tot amb T junction temperature - 150 C j Y transfer admittance f = 1 kHz I = 10 mA V =10V V =4V 14 - mS D DS G2-S fs C input capacitance at gate 1 f = 1 MHz I = 10 mA V = 10 V V = 4 V 2.1 - pF ig1-s D DS G2-S C feedback capacitance f = 1 MHz I = 10 mA V = 10 V V =4V 20 - fF rs D DS G2-S F noise gure f = 200 MHz G = 2 mS B =B 12dB S S Sopt I = 10 mA V =10V V =4V D DS G2-S Rev. 03 - 20 November 2007 2 of 7

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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