BF991,215 NXP

BF991 N-channel dual-gate MOS-FET Rev. 03 20 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. NXP Semiconductors Product specication N-channel dual-gate MOS-FET BF991 FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back diodes between gates microminiature package with interconnected source and source. and substrate. APPLICATIONS handbook, halfpage d VHF applications such as: 43 VHF television tuners and FM tuners g 2 Professional communication equipment. g 1 PINNING PIN SYMBOL DESCRIPTION 1 2 s,b 1 s, b source Top view MAM039 2 d drain 3g gate 2 2 Marking code: %MA. 4g gate 1 1 Fig.1 Simplified outline (SOT143) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V drain-source voltage - 20 V DS I drain current - 20 mA D P total power dissipation up to T =60 C - 200 mW tot amb T junction temperature - 150 C j Y transfer admittance f = 1 kHz I = 10 mA V =10V V =4V 14 - mS D DS G2-S fs C input capacitance at gate 1 f = 1 MHz I = 10 mA V = 10 V V = 4 V 2.1 - pF ig1-s D DS G2-S C feedback capacitance f = 1 MHz I = 10 mA V = 10 V V =4V 20 - fF rs D DS G2-S F noise gure f = 200 MHz G = 2 mS B =B 12dB S S Sopt I = 10 mA V =10V V =4V D DS G2-S Rev. 03 - 20 November 2007 2 of 7