X-On Electronics has gained recognition as a prominent supplier of BLF175,112 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. BLF175,112 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

BLF175,112 NXP

BLF175,112 electronic component of NXP
Images are for reference only
See Product Specifications
Part No.BLF175,112
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors RF DMOS 30W HF-VHF
Datasheet: BLF175,112 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
40: USD 52.8487 ea
Line Total: USD 2113.95 
Availability - 0
MOQ: 40  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 40
Multiples : 1
40 : USD 52.8487
80 : USD 50.3258

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Transistor Type
Brand
Product Type
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BLF175,112 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BLF175,112 and other electronic components in the RF MOSFET Transistors category and beyond.

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BLF175 HF/VHF power MOS transistor Rev. 4 1 September 2015 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. Philips Semiconductors Product specication HF/VHF power MOS transistor BLF175 FEATURES PIN CONFIGURATION High power gain Low intermodulation distortion Easy power control Good thermal stability ook, halfpage Withstands full load mismatch 1 4 Gold metallization ensures excellent reliability. d g DESCRIPTION s MBB072 Silicon N-channel enhancement 23 mode vertical D-MOS transistor designed for large signal amplifier MSB057 applications in the HF/VHF frequency range. The transistor has a 4-lead, SOT123A Fig.1 Simplified outline and symbol. flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source CAUTION voltage (V ) information is provided GS for matched pair applications. Refer This product is supplied in anti-static packing to prevent damage caused by to the handbook General section for electrostatic discharge during transport and handling. For further information, further information. refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. PINNING - SOT123A WARNING PIN DESCRIPTION Product and environmental safety - toxic materials 1 drain This product contains beryllium oxide. The product is entirely safe provided 2 source that the BeO disc is not damaged. All persons who handle, use or dispose of 3 gate this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to 4 source the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at T = 25 C in a common source test circuit. h MODE OF f V I P G d DS DQ L p D 3 OPERATION (MH ) (V) (mA) (W) (dB) (%) (dB) Z class-A 28 50 800 8 (PEP) >24 -<- 40 (1) class-AB 28 50 150 30 (PEP) typ. 24 typ. 40 typ. - 35 CW, class-B 108 50 30 30 typ. 20 typ. 65 - Note 1. 2-tone efficiency. 2003 Jul 22 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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