BLF183XRU NXP

BLF183XR; BLF183XRS Power LDMOS transistor Rev. 3 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 350 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1. Application information Test signal f V P G DS L p D (MHz) (V) (W) (dB) (%) pulsed RF 108 50 350 28 75 CW 88 to 108 50 388 26 80 pulsed RF 30 to 512 50 400 15 48 CW 30 to 512 35 193 14 47 1.2 Features and benefits Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (HF to 600 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Industrial, scientific and medical applications Broadcast transmitter applicationsBLF183XR; BLF183XRS Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF183XR (SOT1121A) 1drain1 1 2 1 2drain2 3gate1 3 4gate2 5 5 4 [1] 5source 3 4 2 sym117 BLF183XRS (SOT1121B) 1drain1 1 12 2drain2 3gate1 3 345 4gate2 5 4 [1] 5source 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF183XR - flanged LDMOST ceramic package; 2 mounting holes; SOT1121A 4 leads BLF183XRS - earless flanged ceramic package; 4 leads SOT1121B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 135 V DS V gate-source voltage 6+11 V GS T storage temperature 65 +150 C stg [1] T junction temperature - 225 C j [1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF calculator. BLF183XR_BLF183XRS#3 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 1 September 2015 2 of 15