Product Information

BLF245B,112

BLF245B,112 electronic component of NXP

Datasheet
RF MOSFET Transistors RF DMOS 30W VHF P-P

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 76.3156 ea
Line Total: USD 76.32

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 76.3156
2 : USD 74.7221
5 : USD 72.5131

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Transistor Type
Brand
Product Type
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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BLF245B VHF push-pull power MOS transistor Rev. 7 1 September 2015 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. Philips Semiconductors Product specication VHF push-pull power MOS transistor BLF245B FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensures 14 andbook, halfpage d 2 excellent reliability. g 2 s g 1 5 DESCRIPTION d 1 2 3 Dual push-pull silicon N-channel Top view MSB018 MBB157 enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. Fig.1 Simplified outline and symbol. The transistor is encapsulated in a 4-lead, SOT279A balanced flange package, with a ceramic cap. The CAUTION mounting flange provides the common source connection for the This product is supplied in anti-static packing to prevent damage caused by transistors. electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. PINNING - SOT279A WARNING PIN DESCRIPTION Product and environmental safety - toxic materials 1 drain 1 2 gate 1 This product contains beryllium oxide. The product is entirely safe provided 3 gate 2 that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety 4 drain 2 precautions. After use, dispose of as chemical or special waste according to 5 source the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at T =25 C in a push-pull common source test circuit. h f V P G DS L p D MODE OF OPERATION (MHz) (V) (W) (dB) (%) CW, class-B 175 28 30 >14 >55 2003 Aug 04 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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