X-On Electronics has gained recognition as a prominent supplier of BLF248,112 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. BLF248,112 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

BLF248,112 NXP

BLF248,112 electronic component of NXP
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Part No.BLF248,112
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors RF DMOS 300W VHF P-P
Datasheet: BLF248,112 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 230.2079 ea
Line Total: USD 230.21 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 02 Jan to Wed. 08 Jan
MOQ : 1
Multiples : 1
1 : USD 230.2079
2 : USD 223.4787

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Transistor Type
Brand
Product Type
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BLF248,112 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BLF248,112 and other electronic components in the RF MOSFET Transistors category and beyond.

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BLF248 VHF push-pull power MOS transistor Rev. 4 1 September 2015 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. Philips Semiconductors Product specication VHF push-pull power MOS transistor BLF248 FEATURES PIN CONFIGURATION High power gain Easy power control 12 Good thermal stability d halfpage 2 Gold metallization ensures g 2 excellent reliability. s g 1 d 1 55 DESCRIPTION 34 MBB157 MSB008 Dual push-pull silicon N-channel Top view enhancement mode vertical D-MOS transistor, designed for large signal amplifier applications in the VHF Fig.1 Simplified outline and symbol. frequency range. The transistor is encapsulated in a 4-lead SOT262 A1 balanced flange CAUTION package, with two ceramic caps. The This product is supplied in anti-static packing to prevent damage caused by mounting flange provides the electrostatic discharge during transport and handling. For further information, common source connection for the refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. transistors. WARNING PINNING - SOT262 A1 Product and environmental safety - toxic materials PIN DESCRIPTION This product contains beryllium oxide. The product is entirely safe provided 1 drain 1 that the BeO discs are not damaged. All persons who handle, use or dispose 2 drain 2 of this product should be aware of its nature and of the necessary safety 3 gate 1 precautions. After use, dispose of as chemical or special waste according to 4 gate 2 the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 5 source QUICK REFERENCE DATA RF performance at T = 25 C in a push-pull common source test circuit. h f V P G DS L p D MODE OF OPERATION (MHz) (V) (W) (dB) (%) class-AB 225 28 300 >10 >55 175 28 300 typ. 13 typ. 67 2003 Sep 02 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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