BLF6G20LS-110,112 NXP

BLF6G20-110 BLF6G20LS-110 Power LDMOS transistor Rev. 4 1 September 2015 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at T = 25 C in a common source class-AB production test circuit. case Mode of operation f V P G IMD3 ACPR DS L(AV) p D (MHz) (V) (W) (dB) (%) (dBc) (dBc) 1 1 2-carrier W-CDMA 1930 to 1990 28 25 19 32 34 38 1 Test signal: 3GPP test model 1 64 DPCH PAR = 7 dB at 0.01 % probability on CCDF per carrier carrier spacing 10 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an I of 900 mA: Dq Average output power = 25 W Power gain = 19 dB Efficiency = 32 % IMD3 = 34 dBc ACPR = 38 dBc Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (1800 MHz to 2000 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)BLF6G20-110 BLF6G20LS-110 Power LDMOS transistor 1.3 Applications RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multicarrier applications in the 1800 MHz to 2000 MHz frequency range 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF6G20-110 (SOT502A) 1 drain 1 1 2 gate 3 1 3 source 2 2 3 sym112 BLF6G20LS-110 (SOT502B) 1 drain 1 1 2 gate 3 1 3 source 2 2 3 sym112 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF6G20-110 - flanged LDMOST ceramic package 2 mounting holes SOT502A 2 leads BLF6G20LS-110 - earless flanged LDMOST ceramic package 2 leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 65 V DS V gate-source voltage 0.5 +13 V GS I drain current - 29 A D T storage temperature 65 +150 C stg T junction temperature - 225 C j BLF6G20-110 BLF6G20LS-110 4 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 4 1 September 2015 2 of 11