X-On Electronics has gained recognition as a prominent supplier of BLF881,112 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. BLF881,112 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

BLF881,112 NXP

BLF881,112 electronic component of NXP
BLF881,112 NXP
BLF881,112 RF MOSFET Transistors
BLF881,112  Semiconductors

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See Product Specifications
Part No. BLF881,112
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors UHF power LDMOS transistor
Datasheet: BLF881,112 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 101.8679 ea
Line Total: USD 101.87 
Availability - 0
MOQ: 1  Multiples: 60
Pack Size: 60
Availability Price Quantity
0
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 1
Multiples : 60
1 : USD 101.8679
10 : USD 95.6782

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Brand
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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We are delighted to provide the BLF881,112 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BLF881,112 and other electronic components in the RF MOSFET Transistors category and beyond.

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BLF881 BLF881S UHF power LDMOS transistor Rev. 4 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. Table 1. Typical performance RF performance at V = 50 V in a common-source 860 MHz test circuit. DS Mode of operation f P P P G IMD3 IMD L L(PEP) L(AV) p D shldr (MHz) (W) (W) (W) (dB) (%) (dBc) (dBc) 2-tone, class AB f = 860 f = 860.1 - 140 - 21 49 34 - 1 2 1 DVB-T (8k OFDM) 858 - - 33 21 34 - 33 1 Measured dBc with delta marker at 4.3 MHz from center frequency. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits 2-Tone performance at 860 MHz, a drain-source voltage V of 50 V and a quiescent DS drain current I =0.5 A: Dq Peak envelope power load power = 140 W Power gain = 21 dB Drain efficiency = 49 % Third order intermodulation distortion = 34 dBc DVB performance at 858 MHz, a drain-source voltage V of 50 V and a quiescent DS drain current I =0.5 A: Dq Average output power = 33 W Power gain = 21 dB Drain efficiency = 34 % Shoulder distance = 33 dBc (4.3 MHz from center frequency) Integrated ESD protection Excellent ruggedness High power gainBLF881 BLF881S UHF power LDMOS transistor High efficiency Excellent reliability Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Communication transmitter applications in the UHF band Industrial applications in the UHF band 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF881 (SOT467C) 1drain 1 2gate 1 3source 2 3 sym112 BLF881S (SOT467B) 1drain 1 1 2gate 1 3source 3 2 3 2 sym112 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF881 - flanged LDMOST ceramic package 2 mounting holes 2 leads SOT467C BLF881S - earless LDMOST ceramic package 2 leads SOT467B BLF881 BLF881S 4 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 4 1 September 2015 2 of 18

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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