X-On Electronics has gained recognition as a prominent supplier of BLF8G27LS-140,118 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. BLF8G27LS-140,118 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

BLF8G27LS-140,118 NXP

BLF8G27LS-140,118 electronic component of NXP
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Part No.BLF8G27LS-140,118
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: Trans RF MOSFET N-CH 65V 3-Pin SOT-502B T/R
Datasheet: BLF8G27LS-140,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
100: USD 34.3846 ea
Line Total: USD 3438.46 
Availability - 0
MOQ: 100  Multiples: 100
Pack Size: 100
   
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We are delighted to provide the BLF8G27LS-140,118 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BLF8G27LS-140,118 and other electronic components in the RF MOSFET Transistors category and beyond.

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BLF8G27LS-140 Power LDMOS transistor Rev. 3 1 September 2015 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at T = 25 C in a common source class-AB production test circuit. case Test signal f I V P G ACPR Dq DS L(AV) p D (MHz) (mA) (V) (W) (dB) (%) (dBc) [1] 2-carrier W-CDMA 2600 to 2700 1300 32 45 17.4 32 30 [1] 2-carrier W-CDMA 2600 to 2700 1300 28 35 17.0 29 31 [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. 1.2 Features and benefits Excellent ruggedness High efficiency Low R providing excellent thermal stability th Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF power amplifier for W-CDMA base stations and multi carrier applications in the 2500 MHz to 2700 MHz frequency rangeBLF8G27LS-140 Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1drain 1 1 2gate 3 [1] 3source 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF8G27LS-140 - earless flanged ceramic package; 2 leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 65 V DS V gate-source voltage 0.5 +13 V GS T storage temperature 65 +150 C stg [1] T junction temperature - 225 C j [1] Continuous use at maximum temperature will affect the reliability. 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction to case T =80 C; P = 55 W 0.27 K/W th(j-c) case L BLF8G27LS-140#3 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 1 September 2015 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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