A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Silicon Power LDMOS FET Mar 12, 2013 FEATURES High Output Power : P = 39.5 dBm TYP. (V = 7.5 V, I = 200 mA, f = 460 MHz, P = 25 dBm) out DS Dset in High power added efficiency : = 66% TYP. (V = 7.5 V, I = 200 mA, f = 460 MHz, P = 25 dBm) add DS Dset in High Linear gain : G = 22 dB TYP. (V = 7.5 V, I = 200 mA, f = 460 MHz, P = 10 dBm) L DS Dset in High ESD tolerance : ESD tolerance > 8 kV (IEC61000-4-2, Contact discharge) Suitable for VHF to UHF-BAND Class-AB power amplifier. APPLICATIONS 150 MHz Band Radio System 460 MHz Band Radio System 900 MHz Band Radio System ORDERING INFORMATION Part Number Order Number Package Marking Supplying Form NE5550979A NE5550979A-A 79A W6 12 mm wide embossed taping (Pb Free) Gate pin faces the perforation side of the tape NE5550979A-T1 NE5550979A-T1-A 12 mm wide embossed taping Gate pin faces the perforation side of the tape Qty 1 kpcs/reel NE5550979A-T1A NE5550979A-T1A-A 12 mm wide embossed taping Gate pin faces the perforation side of the tape Qty 5 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: NE5550979A-A ABSOLUTE MAXIMUM RATINGS (T = 25C, unless otherwise specified) A Operation in excess of any one of these parameters may result in permanent damage. Parameter Symbol Ratings Unit Drain to Source Voltage V 30 V DS Gate to Source Voltage V 6.0 V GS Drain Current I 3.0 A DS Note Total Power Dissipation P 25 W tot Channel Temperature T 150 C ch Storage Temperature T 55 to +150 C stg Note: Value at T = 25C C CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an<R in the PDF file and specifying it in theFind what field. R09DS0031EJ0300 Rev.3.00 Page 1 of 11 Mar 12, 2013 DISCONTINUEDA Business Partner of Renesas Electronics Corporation. NE5550979A RECOMMENDED OPERATING RANGE (T = 25C) A Parameter Symbol Test Conditions MIN. TYP. MAX.Unit Drain to Source Voltage V 7.5 9.0 V DS Gate to Source Voltage V 1.65 2.20 2.85 V GS Drain Current I 1.7 A DS Input Power P f = 460 MHz, V = 7.5 V 25 30 dBm in DS ELECTRICAL CHARACTERISTICS (T = 25C, unless otherwise specified) A Parameter Symbol Test Conditions MIN. TYP. MAX.Unit DC Characteristics Gate to Source Leakage Current I V = 6.0 V 100 nA GSS GS Drain to Source Leakage Current I V = 25 V 10 A DSS DS (Zero Gate Voltage Drain Current) Gate Threshold Voltage V V = 7.5 V, I = 1.0 mA 1.15 1.65 2.25 V th DS DS Drain to Source Breakdown Voltage BV I = 10 A 25 37 V DSS DS Transconductance G V = 7.5 V, I = 700100 mA 1.8 2.2 2.9 S m DS DS Thermal Resistance R Channel to Case 5.0 C/W th RF Characteristics Output Power P f = 460 MHz, V = 7.5 V, 38.5 39.5 dBm out DS Drain Current I P = 25 dBm, 1.70 A DS in Power Drain Efficiency I = 200 mA (RF OFF) 68 % d Dset Power Added Efficiency 66 % add Note 1 Linear Gain G 22.0 dB L Output Power P f = 157 MHz, V = 7.5 V, 39.6 dBm out DS Drain Current I P = 23 dBm, 1.60 A DS in Power Drain Efficiency I = 200 mA (RF OFF) 75 % d Dset Power Added Efficiency 73 % add Note 2 Linear Gain G 25.0 dB L Output Power P f = 900 MHz, V = 7.5 V, 38.6 dBm out DS Drain Current I P = 27 dBm, 1.76 A DS in Power Drain Efficiency I = 200 mA (RF OFF) 55 % d Dset Power Added Efficiency 52 % add Note 1 Linear Gain G 16.0 dB L Note 1 : P = 10 dBm in Note 2 : P = 5 dBm in Remark DC performance is 100% testing. RF performance is testing several samples per wafer. Wafer rejection criteria for standard devices is 1 reject for several samples. R09DS0031EJ0300 Rev.3.00 Page 2 of 11 Mar 12, 2013 DISCONTINUED