X-On Electronics has gained recognition as a prominent supplier of BLL6H1214-500,112 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. BLL6H1214-500,112 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

BLL6H1214-500,112 NXP

BLL6H1214-500,112 electronic component of NXP
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Part No.BLL6H1214-500,112
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors TRANS L-BAND RADAR LDMOS
Datasheet: BLL6H1214-500,112 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 773.3232 ea
Line Total: USD 15466.46 
Availability - 0
MOQ: 20  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 20
Multiples : 1
20 : USD 773.3232

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Brand
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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We are delighted to provide the BLL6H1214-500,112 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BLL6H1214-500,112 and other electronic components in the RF MOSFET Transistors category and beyond.

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BLL6H1214-500 BLL6H1214LS-500 LDMOS L-band radar power transistor Rev. 4 1 September 2015 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at T =25 C t = 300 s = 10 % I = 150 mA in a class-AB case p Dq production test circuit. Test signal f V P G t t DS L p D r f (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 1.2 to 1.4 50 500 17 50 20 6 1.2 Features and benefits Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (1.2 GHz to 1.4 GHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) 1.3 Applications L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency rangeBLL6H1214-500 BLL6H1214LS-500 LDMOS L-band radar power transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLL6H1214-500 (SOT539A) 1drain1 12 1 2drain2 5 3gate1 3 4gate2 3 4 5 4 1 5source 2 sym117 BLL6H1214LS-500 (SOT539B) 1drain1 12 1 2drain2 5 3gate1 3 3 4 4gate2 5 4 1 5source 2 sym117 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLL6H1214-500 - flanged balanced ceramic package 2 mounting holes SOT539A 4 leads BLL6H1214LS-500 - earless flanged balanced ceramic package 4 leads SOT539B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 100 V DS V gate-source voltage 0.5 +13 V GS T storage temperature 65 +150 C stg T junction temperature - 200 C j BLL6H1214-500 1214LS-500 4 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 4 1 September 2015 2 of 21

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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