X-On Electronics has gained recognition as a prominent supplier of BF994S,215 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. BF994S,215 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

BF994S,215 NXP

BF994S,215 electronic component of NXP
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Part No.BF994S,215
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: Transistors RF MOSFET N-CH DUAL GATE 20V VHF
Datasheet: BF994S,215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 3000
1 : USD 0.2419
N/A

Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.2263
9000 : USD 0.2263
24000 : USD 0.2179
45000 : USD 0.2137
99000 : USD 0.2095
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Configuration
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Brand
Gate-Source Breakdown Voltage
Product Type
Factory Pack Quantity :
Height
Length
Width
Channel Mode
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BF994S,215 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BF994S,215 and other electronic components in the RF MOSFET Transistors category and beyond.

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DISCRETE SEMICONDUCTORS DATA SHEET BF994S N-channel dual-gate MOS-FET Product specification July 1993NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF994S FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back diodes between gates microminiature package with interconnected source and source. and substrate. APPLICATIONS VHF applications such as: handbook, halfpage d 43 VHF television tuners Professional communication equipment. g 2 g 1 PINNING PIN SYMBOL DESCRIPTION 1 2 1s, b source s,b 2 d drain Top view MAM039 3g gate 2 2 Marking code: MGp. 4g gate 1 1 Fig.1 Simplified outline (SOT143) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V drain-source voltage 20 V DS I drain current 30 mA D P total power dissipation up to T =60 C 200 mW tot amb T junction temperature 150 C j Y transfer admittance f = 1 kHz I =10mA V =15V V =4V 18 mS D DS G2-S fs C input capacitance at gate 1 f = 1 MHz I =10mA V =15V V =4V 2.5 3 pF ig1-s D DS G2-S C feedback capacitance f = 1 MHz I =10mA V =15V V =4V 25 fF rs D DS G2-S F noise figure f = 200 MHz G =2mS B =B 1 dB S S Sopt I =10mA V =15V V =4V D DS G2-S July 1993 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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