BFG10,215 NXP

BFG10 BFG10/X NPN 2 GHz RF power transistor Rev. 05 22 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. NXP Semiconductors Product specication NPN 2 GHz RF power transistor BFG10 BFG10/X FEATURES PINNING High power gain PIN DESCRIPTION High efficiency BFG10 (see Fig.1) handbook, 2 columns4 3 Small size discrete power amplifier 1 collector 2 base 1.9 GHz operating area 3 emitter Gold metallization ensures 12 4 emitter excellent reliability. Top view MSB014 BFG10/X (see Fig.1) APPLICATIONS 1 collector 2 emitter Common emitter class-AB operation in hand-held radio 3 base Fig.1 SOT143. equipment at 1.9 GHz. 4 emitter DESCRIPTION MARKING NPN silicon planar epitaxial transistor TYPE NUMBER CODE encapsulated in plastic, 4-pin BFG10 %MS dual-emitter SOT143 package. BFG10/X %MT QUICK REFERENCE DATA RF performance at T =25 C in a common-emitter test circuit (see Fig.7). amb f V P G CE L p c MODE OF OPERATION (GHz) (V) (mW) (dB) (%) Pulsed, class-AB, duty cycle: < 1 : 8 1.9 3.6 200 5 50 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter - 20 V CBO V collector-emitter voltage open base - 8V CEO V emitter-base voltage open collector - 2.5 V EBO I collector current (DC) - 250 mA C I average collector current - 250 mA C(AV) P total power dissipation up to T =60 C see Fig.2 note 1 - 400 mW tot s T storage temperature - 65 +150 C stg T junction temperature - 175 C j Note 1. T is the temperature at the soldering point of the collector pin. s Rev. 05 - 22 November 2007 2 of 11