X-On Electronics has gained recognition as a prominent supplier of BFP 196W H6327 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFP 196W H6327 RF Bipolar Transistors are a product manufactured by Infineon. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFP 196W H6327 Infineon

BFP 196W H6327 electronic component of Infineon
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See Product Specifications
Part No.BFP 196W H6327
Manufacturer: Infineon
Category: RF Bipolar Transistors
Description: Transistors RF Bipolar RF BIP TRANSISTOR
Datasheet: BFP 196W H6327 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.429 ea
Line Total: USD 0.43 
Availability - 5772
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5772
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.429
10 : USD 0.3245
100 : USD 0.2024
1000 : USD 0.1067
3000 : USD 0.0946
9000 : USD 0.0814
24000 : USD 0.077
45000 : USD 0.0759

2900
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.49
3 : USD 0.392
10 : USD 0.3514
25 : USD 0.2716
100 : USD 0.224

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Transistor Type
Technology
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Type
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Cnhts
Gain Bandwidth Product Ft
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BFP 196W H6327 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFP 196W H6327 and other electronic components in the RF Bipolar Transistors category and beyond.

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BFP196W Low Noise Silicon Bipolar RF Transistor For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA Power amplifier for DECT and PCN systems f = 7.5 GHz, NF = 1.3 dB at 900 MHz T min Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Marking Pin Configuration Package BFP196W RIs 1 = E 2 = C 3 = E 4 = B - - SOT343 Maximum Ratings at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit 12 V Collector-emitter voltage V CEO 20 Collector-emitter voltage V CES 20 Collector-base voltage V CBO 2 Emitter-base voltage V EBO 150 mA Collector current I C 15 Base current I B 1) 700 mW Total power dissipation P tot T 69C S 150 C Junction temperature T J Ambient temperature T -65 ... 150 A Storage temperature T -65 ... 150 Stg Thermal Resistance Parameter Symbol Value Unit 2) K/W Junction - soldering point R 115 thJS 1 T is measured on the collector lead at the soldering point to the pcb S 2 For the definition of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJS 1 2014-04-04BFP196W Electrical Characteristics at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 12 - - V Collector-emitter breakdown voltage V (BR)CEO I = 1 mA, I = 0 C B - - 100 A Collector-emitter cutoff current I CES V = 20 V, V = 0 CE BE - - 100 nA Collector-base cutoff current I CBO V = 10 V, I = 0 CB E - - 1 A Emitter-base cutoff current I EBO V = 1 V, I = 0 EB C 70 100 140 - DC current gain h FE I = 50 mA, V = 8 V, pulse measured C CE 2 2014-04-04

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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