BFG35,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification 1999 Aug 24 Supersedes data of 1995 Sep 12NXP Semiconductors Product specification NPN 4 GHz wideband transistor BFG35 DESCRIPTION PINNING lfpage 4 NPN planar epitaxial transistor PIN DESCRIPTION mounted in a plastic SOT223 1emitter envelope, intended for wideband 2base amplifier applications. It features high output voltage capabilities. 3emitter 4 collector 123 Top view MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-emitter voltage open base 18 V CEO I DC collector current 150 mA C P total power dissipation up to T =135 C (note 1) 1W tot s h DC current gain I =100 mA V =10V T =25 C25 70 FE C CE j f transition frequency I =100 mA V =10V 4 GHz T C CE f= 500MHz T =25 C amb G maximum unilateral power gain I =100 mA V =10V 15 dB UM C CE f= 500MHz T =25 C amb I =100 mA V =10V 11 dB C CE f= 800MHz T =25 C amb V output voltage I =100 mA V =10V 750 mV o C CE d = 60 dB R =75 im L f = 793.25 MHz T =25 C (p+q r) amb LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 25 V CBO V collector-emitter voltage open base 18 V CEO V emitter-base voltage open collector 2V EBO I DC collector current 150 mA C P total power dissipation up to T =135 C (note 1) 1W tot s T storage temperature 65 +150 C stg T junction temperature 175 C j Note 1. T is the temperature at the soldering point of the collector tab. s 1999 Aug 24 2