X-On Electronics has gained recognition as a prominent supplier of BFG35,115 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFG35,115 RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFG35,115 NXP

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Part No.	BFG35,115
Manufacturer:	NXP
Category:	RF Bipolar Transistors
Description:	Transistors RF Bipolar NPN 10V 150mA 4GHZ
Datasheet:	BFG35,115 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

BFG35,115 More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 MOQ : 1 Multiples : 1	1 : USD 1.8116 10 : USD 1.4414 100 : USD 1.0893 500 : USD 0.882 1000 : USD 0.6914 5000 : USD 0.645	N/A Obsolete

0 MOQ : 1 Multiples : 1	1 : USD 1.3612 50 : USD 0.945 100 : USD 0.8964 250 : USD 0.8424 500 : USD 0.7992	N/A Obsolete

0 MOQ : 1 Multiples : 1	1 : USD 2.1696 10 : USD 0.8889 100 : USD 0.7229 500 : USD 0.7125 1000 : USD 0.7021	N/A Obsolete

We are delighted to provide the BFG35,115 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFG35,115 and other electronic components in the RF Bipolar Transistors category and beyond.

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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification 1999 Aug 24 Supersedes data of 1995 Sep 12NXP Semiconductors Product specification NPN 4 GHz wideband transistor BFG35 DESCRIPTION PINNING lfpage 4 NPN planar epitaxial transistor PIN DESCRIPTION mounted in a plastic SOT223 1emitter envelope, intended for wideband 2base amplifier applications. It features high output voltage capabilities. 3emitter 4 collector 123 Top view MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-emitter voltage open base 18 V CEO I DC collector current 150 mA C P total power dissipation up to T =135 C (note 1) 1W tot s h DC current gain I =100 mA V =10V T =25 C25 70 FE C CE j f transition frequency I =100 mA V =10V 4 GHz T C CE f= 500MHz T =25 C amb G maximum unilateral power gain I =100 mA V =10V 15 dB UM C CE f= 500MHz T =25 C amb I =100 mA V =10V 11 dB C CE f= 800MHz T =25 C amb V output voltage I =100 mA V =10V 750 mV o C CE d = 60 dB R =75 im L f = 793.25 MHz T =25 C (p+q r) amb LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 25 V CBO V collector-emitter voltage open base 18 V CEO V emitter-base voltage open collector 2V EBO I DC collector current 150 mA C P total power dissipation up to T =135 C (note 1) 1W tot s T storage temperature 65 +150 C stg T junction temperature 175 C j Note 1. T is the temperature at the soldering point of the collector tab. s 1999 Aug 24 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Freescale Semiconductor
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NXP / Freescale
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Manufacturer NXP NXP
Product Category RF Bipolar Transistors RF Bipolar Transistors
RoHS - XON Y Y
Transistor Type Bipolar Bipolar
Technology Si Si
Transistor Polarity Npn Npn
Operating Frequency 4000 MHz 4000 MHz
Collector- Emitter Voltage VCEO Max 18 V 18 V
Emitter- Base Voltage VEBO 2 V 2 V
Continuous Collector Current 0.15 A 0.15 A
Pd - Power Dissipation 1000 mW 1000 mW
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Smd/Smt Smd/Smt
Package / Case SOT - 223 SOT - 223
Packaging Reel Reel
Configuration Single Single
Type Rf Bipolar Small Signal Rf Bipolar Small Signal
Brand Nxp Semiconductors Nxp Semiconductors
Maximum Dc Collector Current 0.15 A 0.15 A
Factory Pack Quantity : 1000 1000
Collector- Base Voltage Vcbo 25 V 25 V
Dc Current Gain Hfe Max 25 25
Height 1.7 mm 1.7 mm
Length 6.7 mm 6.7 mm
Width 3.7 mm 3.7 mm
Cnhts 8541290000 8541290000
Gain Bandwidth Product Ft 4000 Mhz 4000 Mhz
Hts Code 8541290075 8541290075
Mxhts 85412999 85412999
Product Type Rf Bipolar Transistors Rf Bipolar Transistors
Subcategory Transistors Transistors
Taric 8541290000 8541290000