X-On Electronics has gained recognition as a prominent supplier of BFG403W,115 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFG403W,115 RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFG403W,115 NXP

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Part No.	BFG403W,115
Manufacturer:	NXP
Category:	RF Bipolar Transistors
Description:	Transistors RF Bipolar NPN 4.5V 17GHZ
Datasheet:	BFG403W,115 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

BFG403W,115 More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 MOQ : 3000 Multiples : 3000	3000 : USD 0.086	N/A Obsolete

0 MOQ : 1 Multiples : 1	1 : USD 0.4234 10 : USD 0.3194 100 : USD 0.1731 1000 : USD 0.1295 3000 : USD 0.1121 9000 : USD 0.1047 24000 : USD 0.1039 45000 : USD 0.1029 99000 : USD 0.0988	N/A Obsolete

We are delighted to provide the BFG403W,115 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFG403W,115 and other electronic components in the RF Bipolar Transistors category and beyond.

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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BFG403W NPN 17 GHz wideband transistor Product specification 1998 Mar 11 Supersedes data of 1997 Oct 29NXP Semiconductors Product specification NPN 17 GHz wideband transistor BFG403W FEATURES PINNING Low current PIN DESCRIPTION Very high power gain 1emitter Low noise figure 2 base High transition frequency 3emitter Very low feedback capacitance. 4 collector APPLICATIONS Pager front ends 3 4 handbook, halfpage RF front end Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) Radar detectors. 21 Top view MSB842 DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin Marking code: P3. dual-emitter SOT343R package. Fig.1 Simplified outline SOT343R. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 10 V CBO V collector-emitter voltage open base 4.5 V CEO I collector current (DC) 33.6 mA C P total power dissipation T 140 C 16 mW tot s h DC current gain I =3mA V =2V T =25 C 5080120 FE C CE j C feedback capacitance I =0 V =2 V f = 1MHz 20 fF re C CB f transition frequency I =3mA V = 2 V f = 2 GHz T =25 C 17 GHz T C CE amb G maximum power gain I =3mA V = 2 V f = 2 GHz T =25 C 22 dB max C CE amb F noise figure I =1mA V = 2 V f = 900 MHz = 1 dB C CE S opt CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 1998 Mar 11 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

FR9 may also be referenced as

Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
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NXP USA Inc.
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Manufacturer NXP NXP
Product Category RF Bipolar Transistors RF Bipolar Transistors
RoHS - XON Y Y
Transistor Type Bipolar Bipolar
Technology Si Si
Transistor Polarity Npn Npn
Operating Frequency 17000 MHz 17000 MHz
Collector- Emitter Voltage VCEO Max 4.5 V 4.5 V
Emitter- Base Voltage VEBO 1 V 1 V
Continuous Collector Current 0.003 A 0.003 A
Pd - Power Dissipation 16 mW 16 mW
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Smd/Smt Smd/Smt
Package / Case SOT - 343 SOT - 343
Packaging Reel Reel
Configuration Single Single
Type Rf Bipolar Small Signal Rf Bipolar Small Signal
Brand Nxp Semiconductors Nxp Semiconductors
Maximum Dc Collector Current 0.003 A 0.003 A
Factory Pack Quantity : 3000 3000
Collector- Base Voltage Vcbo 10 V 10 V
Dc Current Gain Hfe Max 50 50
Height 1 mm 1 mm
Length 2.2 mm 2.2 mm
Width 1.35 mm 1.35 mm
Cnhts 8541210000 8541210000
Gain Bandwidth Product Ft 17000 Mhz 17000 Mhz
Hts Code 8541210075 8541210075
Mxhts 85412101 85412101
Product Type Rf Bipolar Transistors Rf Bipolar Transistors
Subcategory Transistors Transistors
Taric 8541210000 8541210000