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X-On Electronics has gained recognition as a prominent supplier of BFG403W,115 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFG403W,115 RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFG403W,115 NXP

BFG403W,115 electronic component of NXP
BFG403W,115 NXP
BFG403W,115 RF Bipolar Transistors
BFG403W,115  Semiconductors

Images are for reference only
See Product Specifications
Part No. BFG403W,115
Manufacturer: NXP
Category: RF Bipolar Transistors
Description: Transistors RF Bipolar NPN 4.5V 17GHZ
Datasheet: BFG403W,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.086
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.4234
10 : USD 0.3194
100 : USD 0.1731
1000 : USD 0.1295
3000 : USD 0.1121
9000 : USD 0.1047
24000 : USD 0.1039
45000 : USD 0.1029
99000 : USD 0.0988
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Operating Frequency
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Type
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
Collector- Base Voltage Vcbo
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Gain Bandwidth Product Ft
Hts Code
Mxhts
Product Type
Subcategory
Taric
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BFG403W,115 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFG403W,115 and other electronic components in the RF Bipolar Transistors category and beyond.

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DISCRETE SEMICONDUCTORS DATA SHEET BFG403W NPN 17 GHz wideband transistor Product specification 1998 Mar 11 Supersedes data of 1997 Oct 29NXP Semiconductors Product specification NPN 17 GHz wideband transistor BFG403W FEATURES PINNING Low current PIN DESCRIPTION Very high power gain 1emitter Low noise figure 2 base High transition frequency 3emitter Very low feedback capacitance. 4 collector APPLICATIONS Pager front ends 3 4 handbook, halfpage RF front end Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) Radar detectors. 21 Top view MSB842 DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin Marking code: P3. dual-emitter SOT343R package. Fig.1 Simplified outline SOT343R. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 10 V CBO V collector-emitter voltage open base 4.5 V CEO I collector current (DC) 33.6 mA C P total power dissipation T 140 C 16 mW tot s h DC current gain I =3mA V =2V T =25 C 5080120 FE C CE j C feedback capacitance I =0 V =2 V f = 1MHz 20 fF re C CB f transition frequency I =3mA V = 2 V f = 2 GHz T =25 C 17 GHz T C CE amb G maximum power gain I =3mA V = 2 V f = 2 GHz T =25 C 22 dB max C CE amb F noise figure I =1mA V = 2 V f = 900 MHz = 1 dB C CE S opt CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 1998 Mar 11 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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