X-On Electronics has gained recognition as a prominent supplier of BFG540W/X,115 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFG540W/X,115 RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFG540W/X,115 NXP

BFG540W/X,115 electronic component of NXP
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Part No.BFG540W/X,115
Manufacturer: NXP
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors NPN 8V 120mA 9GHZ
Datasheet: BFG540W/X,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.2337 ea
Line Total: USD 701.1 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.2337

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Operating Frequency
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
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We are delighted to provide the BFG540W/X,115 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFG540W/X,115 and other electronic components in the RF Bipolar Transistors category and beyond.

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DISCRETE SEMICONDUCTORS DATA SHEET BFG540W BFG540W/X BFG540W/XR NPN 9 GHz wideband transistor Product specification 2000 May 23 Supersedes data of 1997 Dec 04NXP Semiconductors Product specification BFG540W NPN 9 GHz wideband transistor BFG540W/X BFG540W/XR FEATURES MARKING High power gain TYPE NUMBER CODE lfpage 4 3 Low noise figure BFG540W N9 High transition frequency BFG540W/X N7 Gold metallization ensures BFG540W/XR N8 excellent reliability. 1 2 PINNING Top view MBK523 APPLICATIONS PIN DESCRIPTION RF front end wideband applications in BFG540W (see Fig.1) the GHz range, such as analog and digital cellular telephones, cordless 1 collector Fig.1 SOT343N. telephones (CT2, CT3, PCN, DECT, 2base etc.), radar detectors, pagers, satellite 3emitter television tuners (SATV), MATV/CATV amplifiers and repeater 4emitter amplifiers in fibre-optic systems. BFG540W/X (see Fig.1) 3 4 halfpage 1 collector DESCRIPTION 2emitter NPN silicon planar epitaxial 3base transistors in 4-pin dual-emitter 4emitter 21 SOT343N and SOT343R plastic Top view MSB842 BFG540W/XR (see Fig.2) packages. 1 collector 2emitter 3base Fig.2 SOT343R. 4emitter QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage R =0 15 V CES BE I collector current (DC) 120 mA C P total power dissipation T 85 C 500 mW tot s h DC current gain I =40mA V = 8 V 100 120 250 FE C CE C feedback capacitance I =0 V =8V f= 1MHz 0.5 pF re C CB f transition frequency I =40mA V =8V f= 1GHz T =25 C 9 GHz T C CE amb G maximum unilateral I =40mA V = 8 V f = 900 MHz T =25 C 16 dB UM C CE amb power gain I =40mA V =8V f= 2GHz T =25 C10 dB C CE amb 2 s insertion power gain I =40mA V = 8 V f = 900 MHz T =25 C14 15 dB 21 C CE amb F noise figure I =10mA V =8V f= 2GHz 2.1 dB s opt C CE 2000 May 23 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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