X-On Electronics has gained recognition as a prominent supplier of BFP 650 H6327 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFP 650 H6327 RF Bipolar Transistors are a product manufactured by Infineon. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFP 650 H6327 Infineon

BFP 650 H6327 electronic component of Infineon
BFP 650 H6327 Infineon
BFP 650 H6327 RF Bipolar Transistors
BFP 650 H6327  Semiconductors

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See Product Specifications
Part No. BFP 650 H6327
Manufacturer: Infineon
Category: RF Bipolar Transistors
Description: Transistors RF Bipolar RF BIP TRANSISTOR
Datasheet: BFP 650 H6327 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.3368 ea
Line Total: USD 1.68 
Availability - 116235
Ship by Fri. 25 Jul to Wed. 30 Jul
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
116235
Ship by Fri. 25 Jul to Wed. 30 Jul
MOQ : 5
Multiples : 5
5 : USD 0.3368
50 : USD 0.2988
150 : USD 0.1908
500 : USD 0.177
3000 : USD 0.1349
6000 : USD 0.1312

7346
Ship by Wed. 16 Jul to Fri. 18 Jul
MOQ : 1
Multiples : 1
1 : USD 0.4125
10 : USD 0.2625
100 : USD 0.2185
250 : USD 0.1969
500 : USD 0.1892
1000 : USD 0.1848
3000 : USD 0.1738
9000 : USD 0.1738

503
Ship by Wed. 16 Jul to Fri. 18 Jul
MOQ : 1
Multiples : 1
1 : USD 0.8975
10 : USD 0.5512
100 : USD 0.3381
500 : USD 0.2574
1000 : USD 0.2332
3000 : USD 0.2024
6000 : USD 0.1892
9000 : USD 0.1749
24000 : USD 0.1727

2505
Ship by Wed. 16 Jul to Fri. 18 Jul
MOQ : 1
Multiples : 1
1 : USD 0.924
5 : USD 0.6636
25 : USD 0.5838
34 : USD 0.5768
93 : USD 0.546

   
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Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
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We are delighted to provide the BFP 650 H6327 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFP 650 H6327 and other electronic components in the RF Bipolar Transistors category and beyond.

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BFP650 High linearity wideband silicon NPN RF bipolar transistor Product description The BFP650 is a RF bipolar transistor based on SiGe:C technology that is part of Infineons established sixth generation transistor family. Its transition frequency f of 42 T GHz and high linearity characteristics at low currents make the device suitable for energy efficienc y designs at frequency as high as 5 GHz. It remains cost competitive without compromising on ease of use. Feature list Minimum noise figure NF = 1 dB at 2.4 GHz, 3 V, 30 mA min High gain G = 17.5 dB at 2.4 GHz, 3 V, 70 mA ma OIP = 30 dBm at 2.4 GHz, 3 V, 70 mA 3 Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Low noise, high linearity amplifiers in SDARS receivers Low noise, high linearity amplifiers for ISM band applications Low noise, high linearity amplifiers for multimedia applications such as CATV Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BFP650 / BFP650H6327XTSA1 SOT343 1 = B 2 = E 3 = C 4 = E R5s 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document Revision 2.0 www.infineon.com 2019-01-25BFP650 High linearity wideband silicon NPN RF bipolar transistor Table of contents Table of contents Product description 1 Feature list . 1 Product validation . 1 Potential applications 1 Device information . 1 Table of contents . 2 1 Absolute maximum ratings 3 2 Thermal characteristics . 4 3 Electrical characteristics 5 3.1 DC characteristics . 5 3.2 General AC characteristics 5 3.3 Frequency dependent AC characteristics .6 3.4 Characteristic DC diagrams 10 3.5 Characteristic AC diagrams 13 4 Package information SOT343 .20 Revision history . 21 Disclaimer 22 Datasheet 2 Revision 2.0 2019-01-25

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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