BFP 650 H6327 Infineon

BFP650 High linearity wideband silicon NPN RF bipolar transistor Product description The BFP650 is a RF bipolar transistor based on SiGe:C technology that is part of Infineons established sixth generation transistor family. Its transition frequency f of 42 T GHz and high linearity characteristics at low currents make the device suitable for energy efficienc y designs at frequency as high as 5 GHz. It remains cost competitive without compromising on ease of use. Feature list Minimum noise figure NF = 1 dB at 2.4 GHz, 3 V, 30 mA min High gain G = 17.5 dB at 2.4 GHz, 3 V, 70 mA ma OIP = 30 dBm at 2.4 GHz, 3 V, 70 mA 3 Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Low noise, high linearity amplifiers in SDARS receivers Low noise, high linearity amplifiers for ISM band applications Low noise, high linearity amplifiers for multimedia applications such as CATV Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BFP650 / BFP650H6327XTSA1 SOT343 1 = B 2 = E 3 = C 4 = E R5s 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document Revision 2.0 www.infineon.com 2019-01-25BFP650 High linearity wideband silicon NPN RF bipolar transistor Table of contents Table of contents Product description 1 Feature list . 1 Product validation . 1 Potential applications 1 Device information . 1 Table of contents . 2 1 Absolute maximum ratings 3 2 Thermal characteristics . 4 3 Electrical characteristics 5 3.1 DC characteristics . 5 3.2 General AC characteristics 5 3.3 Frequency dependent AC characteristics .6 3.4 Characteristic DC diagrams 10 3.5 Characteristic AC diagrams 13 4 Package information SOT343 .20 Revision history . 21 Disclaimer 22 Datasheet 2 Revision 2.0 2019-01-25