X-On Electronics has gained recognition as a prominent supplier of BFG541,115 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFG541,115 RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFG541,115 NXP

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Part No.	BFG541,115
Manufacturer:	NXP
Category:	RF Bipolar Transistors
Description:	RF Bipolar Transistors NPN 15V 9GHZ
Datasheet:	BFG541,115 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.4475 ea
Line Total: USD 0.45

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

BFG541,115 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 14 Feb to Thu. 20 Feb MOQ : 1 Multiples : 1	1 : USD 0.9955

0 Ship by Fri. 14 Feb to Thu. 20 Feb MOQ : 1 Multiples : 1	1 : USD 0.4475 125 : USD 0.4362 750 : USD 0.4078

We are delighted to provide the BFG541,115 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFG541,115 and other electronic components in the RF Bipolar Transistors category and beyond.

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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BFG541 NPN 9 GHz wideband transistor Product specification September 1995NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 FEATURES PINNING High power gain PIN DESCRIPTION Low noise figure 1emitter High transition frequency 2 base lfpage 4 Gold metallization ensures 3emitter excellent reliability. 4 collector DESCRIPTION NPN silicon planar epitaxial transistor, intended for wideband applications in the GHz range, such as analog and digital cellular 123 telephones, cordless telephones MSB002 - 1 Top view (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater Fig.1 SOT223. amplifiers in fibre-optic systems. The transistors are mounted in a plastic SOT223 envelope. September 1995 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Freescale Semiconductor
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NXP SEMI
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Manufacturer NXP NXP
Product Category RF Bipolar Transistors RF Bipolar Transistors
RoHS - XON Y Y
Transistor Type Bipolar Bipolar
Technology Si Si
Transistor Polarity Npn Npn
Operating Frequency 9000 MHz 9000 MHz
Collector- Emitter Voltage VCEO Max 15 V 15 V
Emitter- Base Voltage VEBO 2.5 V 2.5 V
Continuous Collector Current 0.12 A 0.12 A
Pd - Power Dissipation 650 mW 650 mW
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Smd/Smt Smd/Smt
Package / Case SOT - 223 SOT - 223
Packaging Reel Reel
Configuration Single Single
Brand Nxp Semiconductors Nxp Semiconductors
Maximum Dc Collector Current 0.12 A 0.12 A
Factory Pack Quantity : 1000 1000