DISCRETE SEMICONDUCTORS DATA SHEET BFG541 NPN 9 GHz wideband transistor Product specification September 1995NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 FEATURES PINNING High power gain PIN DESCRIPTION Low noise figure 1emitter High transition frequency 2 base lfpage 4 Gold metallization ensures 3emitter excellent reliability. 4 collector DESCRIPTION NPN silicon planar epitaxial transistor, intended for wideband applications in the GHz range, such as analog and digital cellular 123 telephones, cordless telephones MSB002 - 1 Top view (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater Fig.1 SOT223. amplifiers in fibre-optic systems. The transistors are mounted in a plastic SOT223 envelope. September 1995 2