BFG590,215 NXP

BFG590; BFG590/X NPN 5 GHz wideband transistors Rev. 04 12 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. NXP Semiconductors Product specication NPN 5 GHz wideband transistors BFG590; BFG590/X FEATURES PINNING High power gain DESCRIPTION PIN Low noise figure BFG590 BFG590/X High transition frequency 1 collector collector Gold metallization ensures excellent reliability. 2 base emitter 3 emitter base APPLICATIONS 4 emitter emitter MATV/CATV amplifiers and RF communications subscriber equipment in the GHz range Ideally suitable for use in class-A, (A)B and C amplifiers with either pulsed or continuous drive. handbook, 2 columns4 3 DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. 12 Top view MSB014 MARKING TYPE NUMBER CODE BFG590 %MH Fig.1 Simplified outline SOT143B. BFG590/X %MN QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter -- 20 V CBO V collector-emitter voltage open base -- 15 V CEO I collector current (DC) -- 200 mA C P total power dissipation T 60 C -- 400 mW tot s h DC current gain I = 35 mA; V=8V 5090280 FE C CE C feedback capacitance I = 0; V =8V; f=1MHz - 0.7 - pF re C CE f transition frequency I = 80 mA; V =4V; f=1GHz - 5 - GHz T C CE G maximum unilateral power gain I = 80 mA; V =4V; - 13 - dB UM C CE f = 900 MHz; T =25 C amb 2 |S | insertion power gain I = 80 mA; V =4V; - 11 - dB 21 C CE f = 900 MHz; T =25 C amb Rev. 04 - 12 November 2007 2 of 11