BFG93A,215 NXP

BFG93A BFG93A/X NPN 6 GHz wideband transistors Rev. 05 26 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. NXP Semiconductors Product specication NPN 6 GHz wideband transistors BFG93A BFG93A/X FEATURES PINNING High power gain PIN DESCRIPTION handbook, 2 columns4 3 Low noise figure BFG93A Gold metallization ensures 1 collector excellent reliability. 2 base 12 3 emitter APPLICATIONS Top view MSB014 4 emitter Wideband applications in the UHF BFG93A/X and microwave range. Fig.1 SOT143B. 1 collector 2 emitter DESCRIPTION MARKING 3 base NPN transistor in a 4-pin, dual-emitter 4 emitter SOT143B plastic package. TYPE NUMBER CODE BFG93A R8% BFG93A/X %MX QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter -- 15 V CBO V collector-emitter voltage open base -- 12 V CEO I collector current (DC) -- 35 mA C P total power dissipation T 85 C -- 300 mW tot s C feedback capacitance I =i = 0 V = 5 V f = 1 MHz - 0.6 - pF re C c CB f transition frequency I = 30 mA V = 5 V f = 500 MHz 4.5 6 - GHz T C CE G maximum unilateral I = 30 mA V =8V T =25 C - 16 - dB UM C CE amb power gain f = 1 GHz I = 30 mA V =8V T =25 C - 10 - dB C CE amb f = 2 GHz F noise gure = I = 5 mA V =8V - 1.7 - dB s opt C CE T =25 C f = 1 GHz amb Rev. 05 - 26 November 2007 2 of 13