BFP 540ESD H6327 Infineon

BFP540ESD Surface mount robust silicon NPN RF bipolar transistor Product description The BFP540ESD is a low noise device based on a grounded emitter (SIEGET ) that is part of Infineons established fifth generation RF bipolar transistor family. Its ESD structure provides high robustness. It remains cost competitive without compromising on ease of use. Feature list Minimum noise figure NF = 0.9 dB at 1.8 GHz, 2 V, 5 mA min High gain G = 21.5 dB at 1.8 GHz, 2 V, 20 mA ms OIP = 24.5 dBm at 1.8 GHz, 2 V, 20 mA 3 High ESD robustness, typical 1 kV (HBM) Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Radio-frequency oscillators such as local oscillator in LNB Broadband low noise amplifiers (LNAs) for CATV, DVB-T, DAB/DMB and FM/AM radio LNAs for wireless communications such as cordless phones Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BFP540ESD / BFP540ESDH6327XTSA1 SOT343 1 = B 2 = E 3 = C 4 = E AUs 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document Revision 2.0 www.infineon.com 2019-01-25BFP540ESD Surface mount robust silicon NPN RF bipolar transistor Table of contents Table of contents Product description 1 Feature list . 1 Product validation . 1 Potential applications 1 Device information . 1 Table of contents . 2 1 Absolute maximum ratings 3 2 Thermal characteristics . 4 3 Electrical characteristics 6 3.1 DC characteristics . 6 3.2 General AC characteristics 6 3.3 Frequency dependent AC characteristics .7 3.4 Characteristic AC diagrams . 8 4 Package information SOT343 .13 Revision history . 14 Disclaimer 15 Datasheet 2 Revision 2.0 2019-01-25