X-On Electronics has gained recognition as a prominent supplier of BFG425W,115 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFG425W,115 RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFG425W,115 NXP

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Part No.	BFG425W,115
Manufacturer:	NXP
Category:	RF Bipolar Transistors
Description:	RF Bipolar Transistors NPN 4.5V 25GHZ
Datasheet:	BFG425W,115 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

3000: USD 0.0723 ea
Line Total: USD 216.9

Availability - 0

MOQ: 3000 Multiples: 1
Pack Size: 1

BFG425W,115 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Tue. 29 Apr to Mon. 05 May MOQ : 1 Multiples : 1	1 : USD 0.2074 10 : USD 0.1508 100 : USD 0.1179 500 : USD 0.0981 1000 : USD 0.0886

0 Ship by Tue. 29 Apr to Mon. 05 May MOQ : 3000 Multiples : 1	3000 : USD 0.0723

Specifications

Manufacturer NXP NXP
Product Category RF Bipolar Transistors RF Bipolar Transistors
Transistor Type RF Wideband RF Wideband
Transistor Polarity NPN NPN
Pd - Power Dissipation 135 mW 135 mW
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature 150 C 150 C
Package / Case SOT - 343 SOT - 343
Packaging Reel Reel
Brand NXP NXP
Collector Emitter Voltage Vbrceo 4.5 V 4.5 V
Transition Frequency Ft 25 GHz 25 GHz
Dc Collector Current 25 mA 25 mA
Dc Current Gain Hfe 80hFE 80hFE
Rf Transistor Case SOT - 343R SOT - 343R
No. Of Pins 3Pins 3Pins
Msl MSL 1 - Unlimited MSL 1 - Unlimited
Svhc No SVHC (27 - Jun - 2018) No SVHC (27 - Jun - 2018)
Current Ic Continuous A Max 25 mA 25 mA
Gain Bandwidth Ft Typ 25Ghz 25Ghz
Hfe Min 50 50
Operating Temperature Range - 65 C to + 150 C - 65 C to + 150 C
Termination Type Surface Mount Device Surface Mount Device
Transistor Case Style SOT - 343R SOT - 343R

We are delighted to provide the BFG425W,115 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFG425W,115 and other electronic components in the RF Bipolar Transistors category and beyond.

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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BFG425W NPN 25 GHz wideband transistor Product specification 2010 Sep 15 Supersedes data of 1998 Mar 11NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W FEATURES PINNING Very high power gain PIN DESCRIPTION Low noise figure 1emitter High transition frequency 2base Emitter is thermal lead 3emitter Low feedback capacitance. 4 collector APPLICATIONS RF front end 3 4 handbook, halfpage Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) Radar detectors Pagers 21 Satellite television tuners (SATV) Top view MSB842 High frequency oscillators. Marking code: P5* * = - : made in Hong Kong * = p : made in Hong Kong DESCRIPTION * = t : made in Malaysia NPN double polysilicon wideband transistor with buried Fig.1 Simplified outline SOT343R. layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 10 V CBO V collector-emitter voltage open base 4.5 V CEO I collector current (DC) 25 30 mA C P total power dissipation T 103 C 135 mW tot s h DC current gain I =25mA V =2V T =25 C 5080120 FE C CE j C feedback capacitance I =0 V =2 V f = 1MHz 95 fF re C CB f transition frequency I =25mA V = 2 V f = 2 GHz T =25 C 25 GHz T C CE amb G maximum power gain I =25mA V = 2 V f = 2 GHz T =25 C 20 dB max C CE amb F noise figure I =2mA V = 2 V f = 2 GHz = 1.2 dB C CE S opt CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 2010 Sep 15 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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