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X-On Electronics has gained recognition as a prominent supplier of BFG425W,115 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFG425W,115 RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFG425W,115 NXP

BFG425W,115 electronic component of NXP
BFG425W,115 NXP
BFG425W,115 RF Bipolar Transistors
BFG425W,115  Semiconductors

Images are for reference only
See Product Specifications
Part No. BFG425W,115
Manufacturer: NXP
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors NPN 4.5V 25GHZ
Datasheet: BFG425W,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0723 ea
Line Total: USD 216.9 
Availability - 0
MOQ: 3000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 29 Apr to Mon. 05 May
MOQ : 1
Multiples : 1
1 : USD 0.2074
10 : USD 0.1508
100 : USD 0.1179
500 : USD 0.0981
1000 : USD 0.0886

0
Ship by Tue. 29 Apr to Mon. 05 May
MOQ : 3000
Multiples : 1
3000 : USD 0.0723

   
Manufacturer
Product Category
Transistor Type
Transistor Polarity
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Package / Case
Packaging
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Dc Collector Current
Dc Current Gain Hfe
Rf Transistor Case
No. Of Pins
Msl
Svhc
Current Ic Continuous A Max
Gain Bandwidth Ft Typ
Hfe Min
Operating Temperature Range
Termination Type
Transistor Case Style
 
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We are delighted to provide the BFG425W,115 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFG425W,115 and other electronic components in the RF Bipolar Transistors category and beyond.

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DISCRETE SEMICONDUCTORS DATA SHEET BFG425W NPN 25 GHz wideband transistor Product specification 2010 Sep 15 Supersedes data of 1998 Mar 11NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W FEATURES PINNING Very high power gain PIN DESCRIPTION Low noise figure 1emitter High transition frequency 2base Emitter is thermal lead 3emitter Low feedback capacitance. 4 collector APPLICATIONS RF front end 3 4 handbook, halfpage Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) Radar detectors Pagers 21 Satellite television tuners (SATV) Top view MSB842 High frequency oscillators. Marking code: P5* * = - : made in Hong Kong * = p : made in Hong Kong DESCRIPTION * = t : made in Malaysia NPN double polysilicon wideband transistor with buried Fig.1 Simplified outline SOT343R. layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 10 V CBO V collector-emitter voltage open base 4.5 V CEO I collector current (DC) 25 30 mA C P total power dissipation T 103 C 135 mW tot s h DC current gain I =25mA V =2V T =25 C 5080120 FE C CE j C feedback capacitance I =0 V =2 V f = 1MHz 95 fF re C CB f transition frequency I =25mA V = 2 V f = 2 GHz T =25 C 25 GHz T C CE amb G maximum power gain I =25mA V = 2 V f = 2 GHz T =25 C 20 dB max C CE amb F noise figure I =2mA V = 2 V f = 2 GHz = 1.2 dB C CE S opt CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 2010 Sep 15 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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