BFG425W,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BFG425W NPN 25 GHz wideband transistor Product specification 2010 Sep 15 Supersedes data of 1998 Mar 11NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W FEATURES PINNING Very high power gain PIN DESCRIPTION Low noise figure 1emitter High transition frequency 2base Emitter is thermal lead 3emitter Low feedback capacitance. 4 collector APPLICATIONS RF front end 3 4 handbook, halfpage Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) Radar detectors Pagers 21 Satellite television tuners (SATV) Top view MSB842 High frequency oscillators. Marking code: P5* * = - : made in Hong Kong * = p : made in Hong Kong DESCRIPTION * = t : made in Malaysia NPN double polysilicon wideband transistor with buried Fig.1 Simplified outline SOT343R. layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 10 V CBO V collector-emitter voltage open base 4.5 V CEO I collector current (DC) 25 30 mA C P total power dissipation T 103 C 135 mW tot s h DC current gain I =25mA V =2V T =25 C 5080120 FE C CE j C feedback capacitance I =0 V =2 V f = 1MHz 95 fF re C CB f transition frequency I =25mA V = 2 V f = 2 GHz T =25 C 25 GHz T C CE amb G maximum power gain I =25mA V = 2 V f = 2 GHz T =25 C 20 dB max C CE amb F noise figure I =2mA V = 2 V f = 2 GHz = 1.2 dB C CE S opt CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 2010 Sep 15 2