X-On Electronics has gained recognition as a prominent supplier of BFG480W,115 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFG480W,115 RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFG480W,115 NXP

BFG480W,115 electronic component of NXP
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Part No.BFG480W,115
Manufacturer: NXP
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors NPN 4.5V 21GHZ
Datasheet: BFG480W,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.3801 ea
Line Total: USD 1140.3 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.3801

   
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Product Category
RoHS - XON
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Transistor Type
Technology
Transistor Polarity
Operating Frequency
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
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Package / Case
Packaging
Configuration
Brand
Maximum Dc Collector Current
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We are delighted to provide the BFG480W,115 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFG480W,115 and other electronic components in the RF Bipolar Transistors category and beyond.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFG480W NPN wideband transistor Product specification 1998 Oct 21 Supersedes data of 1998 Jul 09NXP Semiconductors Product specification NPN wideband transistor BFG480W FEATURES PINNING High power gain PIN DESCRIPTION High efficiency 1emitter Low noise figure 2base High transition frequency 3emitter Emitter is thermal lead 4 collector Low feedback capacitance Linear and non-linear operation. 3 4 handbook, halfpage APPLICATIONS RF front end with high linearity system demands (CDMA) 21 Common emitter class AB driver. Top view MSB842 DESCRIPTION Marking code: P6. NPN double polysilicon wideband transistor with buried Fig.1 Simplified outline SOT343R. layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V collector-emitter voltage open base 4.5 V CEO I collector current (DC) 80 250 mA C P total power dissipation T 60 C 360 mW tot s f transition frequency I =80mA V = 2 V f = 2 GHz T =25 C21 GHz T C CE amb G maximum gain I =80mA V = 2 V f = 2 GHz T =25 C16 dB max C CE amb F noise figure I =8mA V = 2 V f = 2 GHz = 1.8 dB C CE S opt power gain Pulsed class-AB <1 :2 t =5 ms 13.5 dB G p p V = 3.6 V f = 2 GHz P =100 mW CE L collector efficiency Pulsed class-AB <1 :2 t =5 ms 45 % C p V = 3.6 V f = 2 GHz P =100 mW CE L CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 1998 Oct 21 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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