BFG505 BFG505/X NPN 9 GHz wideband transistors Rev. 04 22 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. NXP Semiconductors Product specication NPN 9 GHz wideband transistors BFG505 BFG505/X FEATURES PINNING High power gain DESCRIPTION PIN Low noise figure BFG505 BFG505/X High transition frequency 1 collector collector Gold metallization ensures excellent reliability. 2 base emitter 3 emitter base APPLICATIONS 4 emitter emitter RF front end applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV). handbook, 2 columns4 3 DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. 12 MARKING Top view MSB014 TYPE NUMBER CODE BFG505 %ME Fig.1 Simplified outline SOT143B. BFG505/X %MK QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter -- 20 V CBO V collector-emitter voltage R =0 -- 15 V CES BE I collector current (DC) -- 18 mA C P total power dissipation T 130 C -- 150 mW tot s h DC current gain V =6V I = 5 mA 60 120 250 FE CE C C feedback capacitance V =6V I =i = 0 f = 1 MHz - 0.2 - pF re CB C c f transition frequency V =6V I = 5 mA f = 1 GHz - 9 - GHz T CE C G maximum unilateral V =6V I = 5 mA - 20 - dB UM CE C power gain T =25 C f = 900 MHz amb V =6V I = 5 mA - 13 - dB CE C T =25 C f = 2 GHz amb 2 S insertion power gain V =6V I = 5 mA 16 17 - dB 21 CE c T =25 C f = 900 MHz amb F noise gure = V =6V I = 1.25 mA - 1.2 1.7 dB s opt CE c T =25 C f = 900 MHz amb = V =6V I = 5 mA - 1.6 2.1 dB s opt CE c T =25 C f = 900 MHz amb = V =6V I = 1.25 mA - 1.9 - dB s opt CE c T =25 C f = 2 GHz amb Rev. 04 - 22 November 2007 2 of 13