X-On Electronics has gained recognition as a prominent supplier of BFG520,215 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFG520,215 RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFG520,215 NXP

BFG520,215 electronic component of NXP
BFG520,215 NXP
BFG520,215 RF Bipolar Transistors
BFG520,215  Semiconductors

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See Product Specifications
Part No. BFG520,215
Manufacturer: NXP
Category: RF Bipolar Transistors
Description: Trans RF BJT NPN 15V 0.07A 4-Pin(3+Tab) SOT-143B T/R
Datasheet: BFG520,215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
100: USD 0.1656 ea
Line Total: USD 16.56 
Availability - 0
MOQ: 100  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 100
Multiples : 1
100 : USD 0.1656
500 : USD 0.1404
1000 : USD 0.1126
5000 : USD 0.1052

   
Manufacturer
Product Category
Transistor Polarity
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Dc Collector Current
Dc Current Gain Hfe
Rf Transistor Case
No. Of Pins
Msl
Svhc
Associated Gain Ga
Continuous Collector Current Ic
Continuous Collector Current Ic Max
Current Ic Continuous A Max
Current Ic Hfe
Gain Bandwidth Ft Typ
Hfe Min
No. Of Transistors
Noise Figure Typ
Operating Temperature Range
Output @ Third Order Intercept Point Ip3
Power @ 1Db Gain Compression P1db
Smd Marking
Termination Type
Test Frequency
Transistor Case Style
Voltage Vcbo
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We are delighted to provide the BFG520,215 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFG520,215 and other electronic components in the RF Bipolar Transistors category and beyond.

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BFG520 BFG520/X BFG520/XR NPN 9 GHz wideband transistor Rev. 04 23 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. NXP Semiconductors Product specication NPN 9 GHz wideband transistor BFG520 BFG520/X BFG520/XR FEATURES PINNING 4 3 fpage High power gain PIN DESCRIPTION Low noise figure BFG520 (Fig.1) Code: %MF High transition frequency 1 collector Gold metallization ensures 2 base 12 excellent reliability. Top view MSB014 3 emitter 4 emitter DESCRIPTION Fig.1 SOT143B. BFG520/X (Fig.1) Code: %ML NPN silicon planar epitaxial 1 collector transistors, intended for applications 2 emitter in the RF frontend in the GHz range, 3 base handbook, 2 columns such as analog and digital cellular 3 4 4 emitter telephones, cordless telephones (CT1, CT2, DECT, etc.), radar BFG520/XR (Fig.2) Code: %MP detectors, pagers and satellite TV 1 collector tuners (SATV) and repeater 2 1 2 emitter amplifiers in fibre-optic systems. 3 base Top view MSB035 The transistors are encapsulated in 4 emitter 4-pin, dual-emitter plastic SOT143 Fig.2 SOT143R. and SOT143R envelopes. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter -- 20 V CBO V collector-emitter voltage open base -- 15 V CEO I DC collector current -- 70 mA c P total power dissipation up to T =88 C note 1 -- 300 mW tot s h DC current gain I = 20 mA V = 6 V T =25 C 60 120 250 FE C CE j C feedback capacitance I = 0 V = 6 V f = 1 MHz - 0.3 - pF re C CB f transition frequency I = 20 mA V = 6 V f = 1 GHz - 9 - GHz T C CE T =25 C amb G maximum unilateral I = 20 mA V = 6 V f = 900 MHz - 19 - dB UM C CE power gain T =25 C amb I = 20 mA V = 6 V f = 2 GHz - 13 - dB C CE T =25 C amb 2 S insertion power gain I = 20 mA V = 6 V f = 900 MHz 17 18 - dB 21 C CE T =25 C amb F noise gure = I = 5 mA V =6V - 1.1 1.6 dB s opt c CE f = 900 MHz T =25 C amb = I = 20 mA V =6 V - 1.6 2.1 dB s opt C CE f = 900 MHz T =25 C amb = I = 5 mA V = 8 V - 1.9 - dB s opt C CE f = 2 GHz T =25 C amb Rev. 04 - 23 November 2007 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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