BFP405FH6327XTSA1 Infineon

BFP405F NPN Silicon RF Transistor* For low current applications 3 2 Smallest Package 1.4 x 0.8 x 0.59 mm 4 1 Noise figure F = 1.25 dB at 1.8 GHz outstanding G = 23 dB at 1.8 GHz ms Transition frequency f = 25 GHz T Gold metallization for high reliability SIEGET 25 GHz fT - Line 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Marking Pin Configuration Package BFP405F ALs 1=B 2=E 3=C 4=E - - TSFP-4 Maximum Ratings Parameter Symbol Value Unit V Collector-emitter voltage V CEO T > 0 C 4.5 A T 0 C 4.1 A 15 Collector-emitter voltage V CES 15 Collector-base voltage V CBO 1.5 Emitter-base voltage V EBO 12 mA Collector current I C 1 Base current I B 2) 55 mW Total power dissipation P tot T 122 C S 150 C Junction temperature T j Ambient temperature T -65 ... 150 A Storage temperature T -65 ... 150 stg 1 Pb-containing package may be available upon special request 2 T is measured on the collector lead at the soldering point to the pcb S 2007-04-20 1BFP405F Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 500 thJS Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 4 5 - V Collector-emitter breakdown voltage V (BR)CEO I = 1 mA, I = 0 C B - - 10 A Collector-emitter cutoff current I CES V = 15 V, V = 0 CE BE - - 100 nA Collector-base cutoff current I CBO V = 5 V, I = 0 CB E Emitter-base cutoff current I - - 1 A EBO V = 0.5 V, I = 0 EB C 60 95 130 - DC current gain h FE I = 5 mA, V = 4 V, pulse measured C CE 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2007-04-20 2