X-On Electronics has gained recognition as a prominent supplier of BFP196WH6327XTSA1 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFP196WH6327XTSA1 RF Bipolar Transistors are a product manufactured by Infineon. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFP196WH6327XTSA1 Infineon

BFP196WH6327XTSA1 electronic component of Infineon
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Part No.BFP196WH6327XTSA1
Manufacturer: Infineon
Category: RF Bipolar Transistors
Description: Infineon Technologies RF Bipolar Transistors RF BIP TRANSISTOR
Datasheet: BFP196WH6327XTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1973 ea
Line Total: USD 0.2 
Availability - 55
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
569
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 0.2268
10 : USD 0.1417
25 : USD 0.1371
100 : USD 0.1084
250 : USD 0.1068
500 : USD 0.0772

4
Ship by Wed. 27 Nov to Mon. 02 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1828
50 : USD 0.1474
150 : USD 0.1322
500 : USD 0.1132
3000 : USD 0.0997
6000 : USD 0.0946

55
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1973
10 : USD 0.1148
100 : USD 0.0869
1000 : USD 0.0814
3000 : USD 0.0736
9000 : USD 0.0702
24000 : USD 0.0702
45000 : USD 0.0691
99000 : USD 0.0669

569
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 96
Multiples : 1
96 : USD 0.1371
100 : USD 0.1084
250 : USD 0.1068
500 : USD 0.0772

   
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We are delighted to provide the BFP196WH6327XTSA1 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFP196WH6327XTSA1 and other electronic components in the RF Bipolar Transistors category and beyond.

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BFP196W Low Noise Silicon Bipolar RF Transistor For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA Power amplifier for DECT and PCN systems f = 7.5 GHz, NF = 1.3 dB at 900 MHz T min Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Marking Pin Configuration Package BFP196W RIs 1 = E 2 = C 3 = E 4 = B - - SOT343 Maximum Ratings at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit 12 V Collector-emitter voltage V CEO 20 Collector-emitter voltage V CES 20 Collector-base voltage V CBO 2 Emitter-base voltage V EBO 150 mA Collector current I C 15 Base current I B 1) 700 mW Total power dissipation P tot T 69C S 150 C Junction temperature T J Ambient temperature T -65 ... 150 A Storage temperature T -65 ... 150 Stg Thermal Resistance Parameter Symbol Value Unit 2) K/W Junction - soldering point R 115 thJS 1 T is measured on the collector lead at the soldering point to the pcb S 2 For the definition of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJS 1 2014-04-04BFP196W Electrical Characteristics at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 12 - - V Collector-emitter breakdown voltage V (BR)CEO I = 1 mA, I = 0 C B - - 100 A Collector-emitter cutoff current I CES V = 20 V, V = 0 CE BE - - 100 nA Collector-base cutoff current I CBO V = 10 V, I = 0 CB E - - 1 A Emitter-base cutoff current I EBO V = 1 V, I = 0 EB C 70 100 140 - DC current gain h FE I = 50 mA, V = 8 V, pulse measured C CE 2 2014-04-04

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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