X-On Electronics has gained recognition as a prominent supplier of BFG21W,115 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFG21W,115 RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFG21W,115 NXP

BFG21W,115 electronic component of NXP
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See Product Specifications
Part No.BFG21W,115
Manufacturer: NXP
Category: RF Bipolar Transistors
Description: Transistors RF Bipolar NPN 15V .5A 18GHZ
Datasheet: BFG21W,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.0631
10 : USD 0.877
100 : USD 0.7787
500 : USD 0.6819
1000 : USD 0.6229
3000 : USD 0.5836
N/A

Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.4443
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.8455
10 : USD 0.7207
100 : USD 0.5523
500 : USD 0.4886
1000 : USD 0.3853
3000 : USD 0.3695
9000 : USD 0.3642
24000 : USD 0.3527
45000 : USD 0.3421
N/A

Obsolete
   
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RoHS - XON
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BFG21W,115 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFG21W,115 and other electronic components in the RF Bipolar Transistors category and beyond.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFG21W UHF power transistor Product specification 1998 Jul 06 Supersedes data of 1997 Nov 21NXP Semiconductors Product specification UHF power transistor BFG21W FEATURES PINNING High power gain PIN DESCRIPTION High efficiency 1, 3 emitter 1.9 GHz operating area 2base Linear and non-linear operation. 4 collector APPLICATIONS Common emitter class-AB output stage in hand held radio equipment at 1.9 GHz such as DECT, PHS, etc. 3 4 handbook, halfpage Driver for DCS1800, 1900. DESCRIPTION 21 NPN double polysilicon bipolar power transistor with Top view MSB842 buried layer for low voltage medium power applications encapsulated in a plastic, 4-pin dual-emitter SOT343R package. Marking code: P1. Fig.1 Simplified outline SOT343R. QUICK REFERENCE DATA RF performance at T 60 C in a common emitter test circuit. s f V P G CE L p C MODE OF OPERATION (GHz) (V) (dBm) (dB) (%) Pulsed class-AB <1: 2 t =5ms 1.9 3.6 26 10 typ.55 p 1998 Jul 06 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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