X-On Electronics has gained recognition as a prominent supplier of BFG31,115 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFG31,115 RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFG31,115 NXP

BFG31,115 electronic component of NXP
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See Product Specifications
Part No.BFG31,115
Manufacturer: NXP
Category: RF Bipolar Transistors
Description: Transistors RF Bipolar PNP 10V 100mA 14GHZ
Datasheet: BFG31,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1000
Multiples : 1
1000 : USD 0.4739
N/A

Obsolete
0

Multiples : 1000
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.0949
10 : USD 0.9286
100 : USD 0.7138
500 : USD 0.6334
1000 : USD 0.499
2000 : USD 0.479
10000 : USD 0.4726
25000 : USD 0.4569
50000 : USD 0.4432
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Operating Frequency
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
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Configuration
Type
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
Collector- Base Voltage Vcbo
Dc Current Gain Hfe Max
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BFG31,115 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFG31,115 and other electronic components in the RF Bipolar Transistors category and beyond.

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DISCRETE SEMICONDUCTORS DATA SHEET BFG31 PNP 5 GHz wideband transistor Product specification 1995 Sep 12 Supersedes data of November 1992NXP Semiconductors Product specification PNP 5 GHz wideband transistor BFG31 FEATURES PINNING lfpage High output voltage capability 4 PIN DESCRIPTION High gain bandwidth product 1emitter Good thermal stability 2base Gold metallization ensures 3emitter excellent reliability. 4 collector DESCRIPTION PNP planar epitaxial transistor 123 mounted in a plastic SOT223 MSB002 - 1 Top view envelope. Fig.1 SOT223. It is intended for wideband amplifier applications. NPN complement is the BFG97. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-emitter voltage open base 15 V CEO I DC collector current 100 mA C P total power dissipation up to T = 135 C note 1 1W tot s h DC current gain I = 70 mA V = 10 V 25 FE C CE T =25 C amb f transition frequency I = 70 mA V = 10 V 5.0 GHz T C CE f= 500MHz T = 25 C amb G maximum unilateral power I = 70 mA V = 10 V 12 dB UM C CE gain f= 800MHz T =25 C amb V output voltage I = 100 mA V = 10 V 600 mV o C CE R =75 T = 25 C L amb LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage open base 15 V CEO V emitter-base voltage open collector 3V EBO I DC collector current 100 mA C P total power dissipation up to T =135 C note 1 1W tot s T storage temperature 65 150 C stg T junction temperature 175 C j Note 1. T is the temperature at the soldering point of the collector tab. s 1995 Sep 12 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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