X-On Electronics has gained recognition as a prominent supplier of BLF177,112 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. BLF177,112 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

BLF177,112 NXP

BLF177,112 electronic component of NXP
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See Product Specifications
Part No.BLF177,112
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors RF DMOS 150W HF-VHF
Datasheet: BLF177,112 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 70.8714 ea
Line Total: USD 70.87 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 70.8714
2 : USD 69.3866
5 : USD 67.3344

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Transistor Type
Brand
Forward Transconductance - Min
Product Type
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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We are delighted to provide the BLF177,112 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BLF177,112 and other electronic components in the RF MOSFET Transistors category and beyond.

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BLF177 HF/VHF power MOS transistor Rev. 06 24 January 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. NXP Semiconductors Product specication HF/VHF power MOS transistor BLF177 FEATURES PIN CONFIGURATION High power gain Low intermodulation distortion Easy power control andbook, halfpage 43 Good thermal stability Withstands full load mismatch. d APPLICATIONS Designed for industrial and military g applications in the HF/VHF s MBB072 frequency range. 1 2 DESCRIPTION MLA876 Silicon N-channel enhancement mode vertical D-MOS transistor Fig.1 Simplified outline (SOT121B) and symbol. encapsulated in a 4-lead, SOT121B flanged package, with a ceramic cap. All leads are isolated from the flange. CAUTION A marking code, showing gate-source voltage (V ) information is provided This product is supplied in anti-static packing to prevent damage caused by GS for matched pair applications. Refer electrostatic discharge during transport and handling. For further information, to the handbook General section for refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. further information. WARNING PINNING Product and environmental safety - toxic materials PIN DESCRIPTION This product contains beryllium oxide. The product is entirely safe provided 1 drain that the BeO disc is not damaged. All persons who handle, use or dispose of 2 source this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to 3 gate the regulations applying at the location of the user. It must never be thrown 4 source out with the general or domestic waste. QUICK REFERENCE DATA RF performance at T =25 C in a common source test circuit. h MODE OF f V P G d d DS L p D 3 5 OPERATION (MHz) (V) (W) (dB) (%) (dB) (dB) SSB class-AB 28 50 150 (PEP) >20 >35 <- 30 <- 30 CW class-B 108 50 150 typ. 19 typ. 70 -- Rev. 06 - 24 January 2007 2 of 19

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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