X-On Electronics has gained recognition as a prominent supplier of BLF2324M8LS200PU RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. BLF2324M8LS200PU RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

BLF2324M8LS200PU NXP

BLF2324M8LS200PU electronic component of NXP
BLF2324M8LS200PU NXP
BLF2324M8LS200PU RF MOSFET Transistors
BLF2324M8LS200PU  Semiconductors

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See Product Specifications
Part No. BLF2324M8LS200PU
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors Power LDMOS trans
Datasheet: BLF2324M8LS200PU Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 199.4863 ea
Line Total: USD 199.49 
Availability - 0
MOQ: 1  Multiples: 60
Pack Size: 60
Availability Price Quantity
0
Ship by Tue. 07 Jan to Mon. 13 Jan
MOQ : 1
Multiples : 60
1 : USD 199.4863
5 : USD 188.0816

   
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Id - Continuous Drain Current
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Rds On Drain Source Resistance
Vds Drain Source Breakdown Voltage
Vgs Gate Source Voltage
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We are delighted to provide the BLF2324M8LS200PU from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BLF2324M8LS200PU and other electronic components in the RF MOSFET Transistors category and beyond.

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BLF2324M8LS200P Power LDMOS transistor Rev. 2 1 September 2015 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at T = 25 C in a common source class-AB production test circuit. case Test signal f I V P G ACPR Dq DS L(AV) p D 5M (MHz) (mA) (V) (W) (dB) (%) (dBc) [1] 1-carrier W-CDMA 2300 to 2400 1740 28 60 17.2 32 37 [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. 1.2 Features and benefits Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Designed for broadband operation (2300 MHz to 2400 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF power amplifiers for industrial and multi carrier applications in the 2300 MHz to 2400 MHz frequency rangeBLF2324M8LS200P Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1drain1 12 1 2drain2 5 3gate1 3 3 4 4gate2 5 4 [1] 5source 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF2324M8LS200P - earless flanged balanced ceramic package; 4 leads SOT539B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 65 V DS V gate-source voltage 0.5 +13 V GS T storage temperature 65 +150 C stg T junction temperature - 200 C j [1] T case temperature - 150 C case [1] Continuous use at maximum temperature will affect the MTTF. 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction to case T =80 C; P = 60 W 0.217 K/W th(j-c) case L BLF2324M8LS200P#2 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 2 1 September 2015 2 of 11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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