BLF278 Advanced Semiconductor

BLF278 VHF POWER MOSFET DESCRIPTION: The ASI BLF278 is a Dual Common Source N-Channel Enhancement- PACKAGE STYLE .385X.850 4LFG Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications. MAXIMUM RATINGS 40 A I D V 125 V DSS V 40 V GS O 500 W T = 25 C P DISS C O O T -65 C to +200 C J O O 1 & 2 = DRAIN 3 & 4 = GATE T -65 C to +150 C STG 5 = SOURCE O 0.35 C/W JC O CHARACTERISTICS T = 25 C C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV I = 100 mA 125 V DSS D I V = 50 V V = 0 V 5.0 mA DSS DS GS I V = 0 V V = 20 V 1.0 A GSS DS GS V I = 100 mA V = 10 V 1.0 5.0 V D DS GS(th) V I = 10 A V = 10 V 5 V DS(on) D GS g I = 5.0 A V = 10 V 5.0 mhos fs D DS C 350 iss V = 50 V V = 0 V f = 1.0 MHz pF C DS GS 250 oss 15 C rss G V = 50 V I = 500 mA P = 300 W 14 16 dB DD DQ out ps f = 175 MHz 50 55 % V = 5:1 AT ALL PHASE ANGLES NO DEGRADATION IN OUTPUT POWER SWR A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004 1/7 Specifications are subject to change without notice. ERROR REFERENCE SOURCE NOT FOUND. BLF278 A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004 2/7 Specifications are subject to change without notice.