X-On Electronics has gained recognition as a prominent supplier of MRFE6VP100HR5 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MRFE6VP100HR5 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MRFE6VP100HR5 NXP

MRFE6VP100HR5 electronic component of NXP
MRFE6VP100HR5 NXP
MRFE6VP100HR5 RF MOSFET Transistors
MRFE6VP100HR5  Semiconductors

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Part No. MRFE6VP100HR5
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: Freescale Semiconductor RF MOSFET Transistors VHV6 100W 50V ISM
Datasheet: MRFE6VP100HR5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 194.1867 ea
Line Total: USD 194.19 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 1
Multiples : 1
1 : USD 194.1867
5 : USD 176.2109
10 : USD 172.6119

0
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 50
Multiples : 50
50 : USD 140.0826

0
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ : 1
Multiples : 1
1 : USD 133.1152
10 : USD 124.5101
25 : USD 124.5101
50 : USD 123.7885
100 : USD 121.8715
250 : USD 119.7068

   
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We are delighted to provide the MRFE6VP100HR5 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MRFE6VP100HR5 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:MRFE6VP100H FreescaleSemiconductor Rev. 0, 5/2012 Technical Data RFPowerLDMOSTransistors HighRuggedness N--Channel MRFE6VP100HR5 Enhancement--ModeLateral MOSFETs MRFE6VP100HSR5 RF power transistors designed for both narrowband and broadband ISM, broadcastandaerospaceapplicationsoperatingatfrequenciesfrom1.8to 2000 MHz.ThesedevicesarefabricatedusingFreescalesenhanced ruggedness platform and are suitable for use in applications where high VSWRs 1.8--2000MHz,100W,50V areencountered. BROADBAND TypicalPerformance: V =50Volts RFPOWERLDMOSTRANSISTORS DD P Frequency G IMD out ps D SignalType (W) (MHz) (dB) (%) (dBc) (1,3) 30--512 Two--Tone 100PEP 19.0 30.0 --30 (100 kHz spacing) (2) 512 CW 100 27.2 70.0 (2) 512 Pulse (200 sec,20% 100 Peak 26.0 70.0 NI--780--4 Duty Cycle) MRFE6VP100HR5 LoadMismatch/Ruggedness Frequency P Test out SignalType VSWR (MHz) (W) Voltage Result (2) 512 Pulse >65:1 130 50 NoDevice (100 sec,20% at allPhase (3 dB Degradation NI--780S--4 Duty Cycle) Angles Overdrive) MRFE6VP100HSR5 (2) 512 CW 126 (3 dB Overdrive) 1. Measured in 30--512 MHz broadband reference circuit. 2. Measured in 512 MHz narrowband test circuit. 3. The values shown are the minimum measured performance numbers across the GateA DrainA indicated frequency range. Features Wide Operating Frequency Range GateB DrainB Extremely Rugged Unmatched, Capable of Very Broadband Operation IntegratedStability Enhancements (Top View) Low Thermal Resistance Note: The backside of the package is the IntegratedESD ProtectionCircuitry source terminalforthe transistor. In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. Figure1.PinConnections Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +133 Vdc DSS Gate--Source Voltage V --6.0, +10 Vdc GS Storage Temperature Range T --65 to +150 C stg Case Operating Temperature T --40 to +150 C C (4,5) Operating Junction Temperature T --40 to +225 C J 4. Continuous use at maximum temperature willaffect MTTF. 5. MTTFcalculatoravailable at Table2.ThermalCharacteristics (1,2) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 0.38 C/W JC CW: Case Temperature 81C, 100W CW, 50Vdc, I =100 mA, 512 MHz DQ(A+B) ThermalImpedance, Junction to Case Z 0.12 C/W JC Pulse: Case Temperature 73C, 100 W Peak, 100 sec Pulse Width, 20%Duty Cycle, 50 Vdc, I =100 mA, 512 MHz DQ(A+B) Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2, passes 2500V Machine Model(perEIA/JESD22--A115) B,passes 250V Charge Device Model(perJESD22--C101) IV, passes 2000V Table4.ElectricalCharacteristics (T =25Cunless otherwise noted) A Characteristic Symbol Min Typ Max Unit (3) OffCharacteristics Gate--Source Leakage Current I 400 nAdc GSS (V =5Vdc,V =0Vdc) GS DS Drain--Source Breakdown Voltage V 133 141 Vdc (BR)DSS (V =0Vdc,I =50mA) GS D Zero Gate Voltage Drain Leakage Current I 3 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics (3) Gate Threshold Voltage V 1.6 2.1 2.6 Vdc GS(th) (V =10Vdc,I =170 Adc) DS D Gate Quiescent Voltage V 2.1 2.6 3.1 Vdc GS(Q) (V =50Vdc,I =100 mAdc, Measured in FunctionalTest) DD D (3) Drain--Source On--Voltage V 0.23 Vdc DS(on) (V =10Vdc,I =1Adc) GS D (3) DynamicCharacteristics Reverse TransferCapacitance C 0.24 pF rss (V =50Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Output Capacitance C 23.9 pF oss (V =50Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Input Capacitance C 73.6 pF iss (V =50Vdc,V =0Vdc 30 mV(rms)ac 1 MHz) DS GS FunctionalTests(InFreescaleTestFixture,50ohm system)V =50Vdc,I = 100 mA, P = 100 W Peak (20 W Avg.), f = 512 MHz, DD DQ(A+B) out 200 sec Pulse Width, 20% Duty Cycle PowerGain G 25.0 26.0 27.0 dB ps Drain Efficiency 68.0 70.0 % D Input Return Loss IRL --14 --9 dB LoadMismatch/Ruggedness(InFreescaleTestFixture,50ohm system,I =100mA) DQ(A+B) Frequency Signal P out (MHz) Type VSWR (W) TestVoltage,V Result DD 512 Pulse >65:1 130 Peak 50 No Device Degradation (100 sec,20%Duty Cycle) at allPhase Angles (3 dB Overdrive) CW 126 (3 dB Overdrive) 1. MTTFcalculatoravailable at

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