DocumentNumber:MRFE6VP5150N FreescaleSemiconductor Rev. 1, 7/2014 Technical Data RFPowerLDMOSTransistors MRFE6VP5150NR1 HighRuggedness N--Channel Enhancement--ModeLateral MOSFETs MRFE6VP5150GNR1 ThesehighruggednessdevicesaredesignedforuseinhighVSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and 1.8600MHz,150WCW,50V output designs allowing wide frequency range utilization, between 1.8 and WIDEBAND 600MHz. RFPOWERLDMOSTRANSISTORS TypicalPerformance: V =50Vdc DD P Frequency G out ps D SignalType (W) (MHz) (dB) (%) TO--270WB--4 (1,3) 87.5108 CW 179 22.5 74.6 PLASTIC (2) 230 CW 150 26.3 72.0 MRFE6VP5150NR1 (2) 230 Pulse 150 Peak 26.1 70.3 (100 sec,20% Duty Cycle) LoadMismatch/Ruggedness TO--270WBG--4 Frequency P Test in PLASTIC SignalType VSWR (MHz) (W) Voltage Result MRFE6VP5150GNR1 (1) 98 CW >65:1 3.0 50 NoDevice at allPhase Degradation (3 dB Angles Overdrive) (2) 230 Pulse 0.62 Peak (100 sec,20% (3 dB Duty Cycle) Overdrive) DrainA GateA32 1. Measured in 87.5108 MHz broadband reference circuit. 2. Measured in 230 MHz narrowband test circuit. 3. The values shown are the minimum measured performance numbers across the GateB41 DrainB indicated frequency range. Features Wide Operating Frequency Range (Top View) ExtremeRuggedness Note: Exposed backside of the package is Unmatched Input and Output Allowing Wide Frequency Range Utilization thesourceterminalforthetransistors. IntegratedStability Enhancements Figure1.PinConnections Low Thermal Resistance IntegratedESD ProtectionCircuitry In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel. FreescaleSemiconductor, Inc., 2014. All rights reserved. MRFE6VP5150NR1MRFE6VP5150GNR1 RF DeviceData Freescale Semiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 0.5, +133 Vdc DSS Gate--Source Voltage V 6.0, +10 Vdc GS Storage Temperature Range T 65 to +150 C stg Case Operating Temperature Range T 40 to +150 C C (1,2) Operating Junction Temperature Range T 40 to +225 C J TotalDevice Dissipation T =25 C P 952 W C D Derate above 25 C 4.76 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 0.21 C/W JC CW: Case Temperature 80 C, 150W CW, 50Vdc, I =100 mA, 230 MHz DQ(A+B) ThermalImpedance, Junction to Case Z 0.04 C/W JC Pulse: Case Temperature 66C, 150 W Peak, 100 sec Pulse Width, 20%Duty Cycle, 50 Vdc, I =100 mA, 230 MHz DQ(A+B) Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2, passes 2500V Machine Model(perEIA/JESD22--A115) B,passes 250V Charge Device Model(perJESD22--C101) IV, passes 1200V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwise noted) A Characteristic Symbol Min Typ Max Unit (4) OffCharacteristics Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--Source Breakdown Voltage V 133 139 Vdc (BR)DSS (V =0Vdc,I =50mAdc) GS D Zero Gate Voltage Drain Leakage Current I 5 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics (4) Gate Threshold Voltage V 1.8 2.4 2.8 Vdc GS(th) (V =10Vdc,I =480 Adc) DS D Gate Quiescent Voltage V 2.3 2.8 3.3 Vdc GS(Q) (V =50Vdc,I =100 mAdc, Measured in FunctionalTest) DD D (4) Drain--Source On--Voltage V 0.26 Vdc DS(on) (V =10Vdc,I =1Adc) GS D 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at