DocumentNumber:MRFE6VP5300N FreescaleSemiconductor Rev. 1, 6/2014 Technical Data RFPowerLDMOSTransistors MRFE6VP5300NR1 HighRuggedness N--Channel MRFE6VP5300GNR1 Enhancement--ModeLateral MOSFETs ThesehighruggednessdevicesaredesignedforuseinhighVSWR industrial (including laser and plasma exciters), broadcast (analog and digital), 1.8600MHz,300WCW,50V aerospace and radio/land mobile applications. They are unmatched input and WIDEBAND output designs allowing wide frequency range utilization, between 1.8 and RFPOWERLDMOSTRANSISTORS 600MHz. TypicalPerformance: V =50Vdc DD P Frequency G out ps D SignalType (W) (MHz) (dB) (%) TO--270WB--4 PLASTIC (1,3) 87.5--108 CW 361 23.8 80.1 MRFE6VP5300NR1 (2) 230 CW 300 25.0 70.0 (2) 230 Pulse (100 sec,20% 300 Peak 27.0 71.0 Duty Cycle) LoadMismatch/Ruggedness TO--270WBG--4 Frequency P Test in SignalType VSWR PLASTIC (MHz) (W) Voltage Result MRFE6VP5300GNR1 (1) 98 CW >65:1 3 50 NoDevice at allPhase (3 dB Degradation Angles Overdrive) (2) 230 Pulse 1.16 Peak (100 sec,20% (3 dB Duty Cycle) Overdrive) GateA32 DrainA 1. Measured in 87.5108 MHz broadband reference circuit. 2. Measured in 230 MHz narrowband test circuit. 3. The values shown are the minimum measured performance numbers across the 41 DrainB indicated frequency range. GateB Features Wide Operating Frequency Range (Top View) ExtremeRuggedness Note: Exposed backside of the package is Unmatched Input and Output Allowing Wide Frequency Range Utilization thesourceterminalforthetransistors. IntegratedStability Enhancements Figure1.PinConnections Low Thermal Resistance IntegratedESD ProtectionCircuitry In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel. FreescaleSemiconductor, Inc., 2014. All rights reserved. MRFE6VP5300NR1MRFE6VP5300GNR1 RF DeviceData Freescale Semiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 0.5, +133 Vdc DSS Gate--Source Voltage V 6.0, +10 Vdc GS Storage Temperature Range T 65 to +150 C stg Case Operating Temperature Range T 40 to +150 C C (1,2) Operating Junction Temperature Range T 40 to +225 C J TotalDevice Dissipation T =25 C P 909 W C D Derate above 25 C 4.55 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 0.22 C/W JC CW: Case Temperature 81 C, 305W CW, 50Vdc, I =100 mA, 230 MHz DQ(A+B) ThermalImpedance, Junction to Case Z 0.034 C/W JC Pulse: Case Temperature 59C, 300 W Peak, 100 sec Pulse Width, 20%Duty Cycle, 50 Vdc, I =100 mA, 230 MHz DQ(A+B) Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2, passes 2500V Machine Model(perEIA/JESD22--A115) A,passes 150V Charge Device Model(perJESD22--C101) IV, passes 2000V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwise noted) A Characteristic Symbol Min Typ Max Unit (4) OffCharacteristics Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--Source Breakdown Voltage V 133 140 Vdc (BR)DSS (V =0Vdc,I =50mA) GS D Zero Gate Voltage Drain Leakage Current I 5 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics Gate Threshold Voltage V 1.8 2.3 2.8 Vdc GS(th) (V =10Vdc,I =960 Adc) DS D Gate Quiescent Voltage V 2.2 2.7 3.2 Vdc GS(Q) (V =50Vdc,I =100 mAdc, Measured in FunctionalTest) DD D Drain--Source On--Voltage V 0.26 Vdc DS(on) (V =10Vdc,I =2Adc) GS D 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at