DU28120T RF Power MOSFET Transistor Rev. V1 120 W, 2 - 175 MHz, 28 V Package Outline Features N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than bipolar devices RoHS Compliant ABSOLUTE MAXIMUM RATINGS AT 25 C Parameter Symbol Rating Units Drain-Source Voltage V 65 V DS Gate-Source Voltage V 20 V GS Drain-Source Current I 24 A DS Power Dissipation P 269 W D Junction Temperature T 200 C J Storage Temperature T -55 to +150 C LETTER MILLIMETERS INCHES STG DIM MIN MAX MIN MAX Thermal Resistance 0.65 C/W JC A 24.64 24.89 .970 .980 B 18.29 18.54 .720 .730 C 21.21 21.97 .835 .865 TYPICAL DEVICE IMPEDANCE D 12.60 12.85 .496 .506 F (MHz) Z () Z () IN LOAD E 6.22 6.48 .245 .255 30 4.0 - j8.0 3.4 + j2.4 F 3.81 4.06 .150 .160 50 1.0 - j2.5 2.2 +j1.3 G 5.33 5.59 .210 .220 100 1.0 - j0.5 2.2 + j0.0 H 5.08 5.33 .200 .210 V = 28V, I = 600mA, P = 120 W DD DQ OUT J 3.05 3.30 .120 .130 Z is the series equivalent input impedance of the device K 2.29 2.54 .90 .100 IN from gate to source. L 4.06 4.57 .160 .180 M 6.68 7.49 .263 .295 Z is the optimum series equivalent load impedance LOAD N .10 .15 .004 .006 as measured from drain to ground. ELECTRICAL CHARACTERISTICS AT 25C Parameter Symbol Min Max Units Test Conditions Drain-Source Breakdown Voltage BV 65 - V V = 0.0 V , I = 3.0 mA DSS GS DS Drain-Source Leakage Current I - 6.0 mA V = 28.0 V , V = 0.0 V DSS GS GS Gate-Source Leakage Current I - 6.0 A V = 20.0 V , V = 0.0 V GSS GS DS Gate Threshold Voltage V 2.0 6.0 V V = 10.0 V , I = 600.0 mA GS(TH) DS DS Forward Transconductance G 3.0 - S V = 10.0 V , I = 6000.0 mA , V = 1.0V, 80 s Pulse M DS DS GS Input Capacitance C - 270 pF V = 28.0 V , F = 1.0 MHz ISS DS Output Capacitance C - 240 pF V = 28.0 V , F = 1.0 MHz OSS DS Reverse Capacitance C - 48 pF V = 28.0 V , F = 1.0 MHz RSS DS Power Gain G 13 - dB V = 28.0 V, I = 600 mA, P = 120.0 W F =175 MHz P DD DQ OUT Drain Efficiency 60 - % V = 28.0 V, I = 600 mA, P = 120.0 W F =175 MHz D DD DQ OUT Load Mismatch Tolerance VSWR-T - 30:1 - V = 28.0 V, I = 600 mA, P = 120.0 W F =175 MHz DD DQ OUT 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: DU28120T RF Power MOSFET Transistor Rev. V1 120 W, 2 - 175 MHz, 28 V Typical Broadband Performance Curves EFFICIENCY FREQUENCY GAIN FREQUENCY VS VS V =28 V I =600 mA P =120 W V =28 V I =600 mA P =120 W DD DQ OUT DD DQ OUT 30 70 65 20 60 55 10 0 25 50 100 150 175 200 0 50 150 200 FREQUENCY (MHz) FREQUENCY (MHz) POWER OUTPUT POWER INPUT POWER OUTPUT SUPPLY VOLTAGE VS VS F=175 MHz I =600 mA P =3.0 W V =28 V I =50 mA DQ IN DD DQ 140 200 120 100MHz 175MHz 30MHz 150 100 80 100 60 50 40 0 20 0.1 0.2 0.3 1 2 3 4 5 6 7 8 9 16 20 25 30 33 SUPPLY VOLTAGE (V) POWER INPUT (W) 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: