UF2840P RF Power MOSFET Transistor Rev. V1 40W, 100-500 MHz, 28V Package Outline Features N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration Lower noise floor ABSOLUTE MAXIMUM RATINGS AT 25 C Parameter Symbol Rating Units Drain-Source Voltage V 65 V DS Gate-Source Voltage V 20 V GS Drain-Source Current I 4* A DS Power Dissipation P 116 W D Junction Temperature T 200 C J Storage Temperature T -55 to 150 C STG Thermal Resistance 1.5 C/W JC TYPICAL DEVICE IMPEDANCES F (MHz) Z () Z () IN LOAD 100 6.0-j20.0 25.0j27.0 300 2.5-j5.5 13.0+j13.0 500 4.0+j3.0 12.0j5.0 V =28V, I =500 mA, P =40.0 W DD DQ OUT Z is the series equivalent input impedance of the device IN from gate to source. Z is the optimum series equivalent load impedance LOAD as measured from drain to ground. ELECTRICAL CHARACTERISTICS AT 25C Parameter Symbol Min Max Units Test Conditions Drain-Source Breakdown Voltage BV 65 - V V = 0.0 V , I = 5.0 mA DSS GS DS Drain-Source Leakage Current I - 1.0 mA V = 28.0 V , V = 0.0 V DSS GS GS Gate-Source Leakage Current I - 1.0 A V = 20.0 V , V = 0.0 V GSS GS DS Gate Threshold Voltage V 2.0 6.0 V V = 10.0 V , I = 100.0 mA GS(TH) DS DS Forward Transconductance G .5 - S V = 10.0 V , I 1.0 A , V = 1.0V, 80 s Pulse M DS DS GS Input Capacitance C - 45 pF V = 28.0 V , F = 1.0 MHz ISS DS Output Capacitance - 30 pF V = 28.0 V , F = 1.0 MHz C DS OSS Reverse Capacitance C - 8 pF V = 28.0 V , F = 1.0 MHz RSS DS Power Gain G 10 - dB V = 28.0 V, I = 500.0 mA, P = 40.0 W F =500 MHz P DD DQ OUT Drain Efficiency 50 - % V = 28.0 V, I = 500.0 mA, P = 40.0 W F =500 MHz D DD DQ OUT Load Mismatch Tolerance VSWR-T - 20:1 - V = 28.0 V, I = 500.0 mA, P = 40.0 W F =500 MHz DD DQ OUT *Per side 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: UF2840P RF Power MOSFET Transistor Rev. V1 40W, 100-500 MHz, 28V Typical Broadband Performance Curves POWER OUTPUT VOLTAGE CAPACITANCES VOLTAGE VS VS F=1.0MHz P =3.0 W I =500 mA P =500 W IN DQ OUT 40 50 35 40 30 C OSS 25 30 20 C ISS 20 15 10 10 C RSS 5 0 0 5 10 15 20 25 35 5 10 15 20 25 30 V (V) V (V) DS DD GAIN FREQUENCY EFFICIENCY FREQUENCY VS VS V =28 V P =40 W I =500 mA V =28V I =500 mA P =40 W DD OUT DQ DD DQ OUT 30 65 25 60 20 55 15 10 50 100 200 300 400 500 100 200 300 400 500 FREQUENCY (MHz) FREQUENCY (MHz) POWER OUTPUT POWER INPUT VS V =28 V I =500 mA DD DQ 60 50 100MHz 500 MHz 300MHz 40 30 10 0 0.1 0.25 1 2 2.5 POWER INPUT (W) 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: