DocumentNumber:A2T27S020N NXPSemiconductors Rev. 2, 03/2019 Technical Data RFPowerLDMOSTransistors N--Channel Enhancement--Mode Lateral MOSFETs A2T27S020NR1 These 2.5 W RF power LDMOS transistors are designed for cellular base A2T27S020GNR1 station applications covering the frequency range of 400 to 2700 MHz. Typical Single--Carrier W--CDMA Performance: V =28Vdc, DD I = 185 mA, P = 2.5 W Avg., Input Signal PAR = 9.9 dB 0.01% DQ out (1) 4002700MHz,2.5WAVG.,28V Probability on CCDF. AIRFASTRFPOWERLDMOS 1800MHz TRANSISTORS G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 1805 MHz 20.8 20.9 9.4 44.6 9 1840 MHz 21.1 20.9 9.3 45.6 16 1880 MHz 20.7 20.6 9.1 45.5 13 TO--270--2 Typical Single--Carrier W--CDMA Performance: V =28Vdc, DD PLASTIC I = 185 mA, P = 2.5 W Avg., Input Signal PAR = 9.9 dB 0.01% DQ out A2T27S020NR1 (1) Probability on CCDF. 2100MHz G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 2110 MHz 19.5 20.1 9.3 46.4 10 TO--270G--2 2140 MHz 19.8 19.8 9.0 45.0 13 PLASTIC A2T27S020GNR1 2170 MHz 19.7 20.1 8.9 44.9 11 2600MHz G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 2575 MHz 17.6 20.3 9.3 44.2 8 2605 MHz 18.6 20.4 9.0 41.3 10 21 RF /V RF /V in GS out DS 2635 MHz 18.0 20.1 8.6 40.7 6 1. Alldata measured in fixture with device soldered to heatsink. Features Greater negative gate--source voltage range for improved Class C operation (Top View) Designed for digital predistortion error correctionsystems Note: The backside of the package is the Universal broadband driver source terminalforthe transistor. Figure1.PinConnections 20172019NXP B.V. A2T27S020NR1A2T27S020GNR1 RF DeviceData NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 0.5, +65 Vdc DSS Gate--Source Voltage V 6.0, +10 Vdc GS Operating Voltage V 32, +0 Vdc DD Storage Temperature Range T 65 to +150 C stg Case Operating Temperature Range T 40 to +150 C C (1,2) Operating Junction Temperature Range T 40 to 225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 1.6 C/W JC Case Temperature 71.8C, 2.5 W CW, 28 Vdc, I =185 mA, 1842.5 MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2 Charge Device Model(perJESD22--C101) C3 Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDEC J--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =32Vdc,V =0Vdc) DS GS Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics Gate Threshold Voltage V 0.8 1.2 1.6 Vdc GS(th) (V =10Vdc,I =24.2 Adc) DS D Gate Quiescent Voltage V 1.5 1.8 2.3 Vdc GS(Q) (V =28Vdc,I =185 mAdc, Measured in FunctionalTest) DD D Drain--Source On--Voltage V 0 0.1 0.2 Vdc DS(on) (V =10Vdc,I =242 mAdc) GS D 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at