X-On Electronics has gained recognition as a prominent supplier of A3I35D012WNR1 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. A3I35D012WNR1 RF Amplifier are a product manufactured by NXP. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

A3I35D012WNR1 NXP

A3I35D012WNR1 electronic component of NXP
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Part No.A3I35D012WNR1
Manufacturer: NXP
Category: RF Amplifier
Description: RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier 3200-4000 MHz 1.8 W Avg. 28 V
Datasheet: A3I35D012WNR1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 44.8215
10 : USD 44.3762
25 : USD 43.9308
100 : USD 43.4856
250 : USD 43.0402
500 : USD 42.5845
N/A

Obsolete
   
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We are delighted to provide the A3I35D012WNR1 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the A3I35D012WNR1 and other electronic components in the RF Amplifier category and beyond.

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DocumentNumber:A3I35D012WN NXPSemiconductors Rev. 0, 11/2018 Technical Data RFLDMOSWidebandIntegrated A3I35D012WNR1 PowerAmplifiers A3I35D012WGNR1 The A3I35D012WN wideband integrated circuit is designed for cellular base station applications requiring very wide instantaneous bandwidth capability. This circuit includes on--chip matching that makes it usable from 3200 to 4000 32004000MHz,1.8WAVG.,28V MHz. Its multi--stage structure is rated for 20 to 32 V operation and covers all AIRFASTRFLDMOSWIDEBAND typical cellular basestationmodulationformats. INTEGRATEDPOWERAMPLIFIERS 3500MHz Typical Single--Carrier W--CDMA CharacterizationPerformance: V =28Vdc,I =36mA,I = 138 mA, P = 1.8W Avg., DD DQ1(A+B) DQ2(A+B) out (1) Input Signal PAR = 9.9 dB 0.01%Probability onCCDF. TO--270WB--17 G PAE ACPR ps PLASTIC Frequency (dB) (%) (dBc) A3I35D012WNR1 3400 MHz 28.3 16.5 45.2 3500 MHz 28.0 17.3 45.1 3600 MHz 27.9 17.8 44.8 TO--270WBG--17 3700 MHz 27.8 17.8 44.5 PLASTIC A3I35D012WGNR1 3800 MHz 27.8 17.5 44.7 Features Designed for wide instantaneous bandwidth applications On--chipmatching(50ohm input, DC blocked) Integratedquiescent current temperaturecompensationwith (2) enable/disable function Designedfor digital predistortionerror correctionsystems Optimizedfor Doherty applications 1. Alldata measured in fixture with device soldered to heatsink. 2. RefertoAN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family,andtoAN1987, Quiescent Current Control for the RF Integrated Circuit Device Family.GotoV DS1A VBW 17 A (3) V 1 VBW DS1A A V 2 GS2A RF RF /V V 3 16 inA out1 DS2A GS1A RF /V out1 DS2A RF 4 inA N.C. 5 N.C. 6 (2) V N.C. GS1A 15 QuiescentCurrent N.C. 7 (1) V TemperatureCompensation GS2A N.C. 8 RF 14 9 inB RF /V V out2 DS2B GS1B V 10 GS1B QuiescentCurrent V 11 (1) GS2B V TemperatureCompensation GS2B 13 (3) V 12 VBW DS1B B (Top View) RF RF /V inB out2 DS2B Note: Exposed backside of the package is V VBW DS1B the source terminalforthe transistor. B Figure1.FunctionalBlockDiagram Figure2.PinConnections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated 2. Pinconnections14and16areDCcoupled CircuitFamily,andtoAN1987,QuiescentCurrentControlfortheRFIntegratedCircuit and RF independent. Device Family.Goto

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI
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