DocumentNumber:A3T23H300W23S NXPSemiconductors Rev. 0, 07/2018 Technical Data RFPowerLDMOSTransistor N--Channel Enhancement--ModeLateral MOSFET A3T23H300W23SR6 This63W asymmetricalDoherty RFpowerLDMOStransistorisdesigned for cellular base station applications requiring very wide instantaneous bandwidthcapability covering the frequency range of 2300 to 2400 MHz. 2300MHz 23002400MHz,63WAVG.,30V Typical Doherty Single--Carrier W--CDMA Performance: V =30Vdc, DD AIRFASTRFPOWERLDMOS I = 500 mA, V =0.7Vdc,P = 63 W Avg., Input Signal DQA GSB out TRANSISTOR PAR = 9.9dB 0.01%Probability onCCDF. G OutputPAR ACPR ps D Frequency (dB) (%) (dB) (dBc) 2300 MHz 15.6 49.3 8.4 30.1 2350 MHz 16.1 48.7 8.5 31.9 2400 MHz 16.1 48.0 8.2 32.7 Features Advanced high performance in--package Doherty Designed for wide instantaneous bandwidth applications ACP--1230S--4L2S Greater negativegate--sourcevoltagerange for improved Class C operation Able to withstand extremely high output VSWR and broadband operating conditions (2) 6 VBW Designedfor digital predistortionerror correctionsystems A Carrier RF /V15 RF /V inA GSA outA DSA (1) RF /V24 RF /V inB GSB outB DSB Peaking (2) 3 VBW B (Top View) Figure1.PinConnections 1. Pin connections 4 and 5 are DCcoupled and RFindependent. 2. Device can operate with V current DD supplied through pin 3 and pin 6. 2018NXPB.V. A3T23H300W23SR6 RF DeviceData NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 0.5, +65 Vdc DSS Gate--Source Voltage V 6.0, +10 Vdc GS Operating Voltage V 32, +0 Vdc DD Storage Temperature Range T 65 to +150 C stg Case Operating Temperature Range T 40 to +150 C C (1,2) Operating Junction Temperature Range T 40 to +225 C J CW Operation T =25 C when DC current is fed through pin 3 and pin 6 CW 180 W C Derate above 25 C 1.2 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 0.17 C/W JC Case Temperature 73C, 63W Avg., W--CDMA, 30Vdc, I =500mA, DQA V =0.7Vdc, 2350MHz GSB Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJS--001--2017) 2 Charge Device Model(perJS--002--2014) C3 Table4.ElectricalCharacteristics (T =25 Cunless otherwise noted) A Characteristic Symbol Min Typ Max Unit (4) OffCharacteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 5 Adc DSS (V =32Vdc,V =0Vdc) DS GS Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics -- SideA,Carrier Gate Threshold Voltage V 1.3 1.8 2.3 Vdc GS(th) (V =10Vdc,I =140 Adc) DS D Gate Quiescent Voltage V 2.2 2.6 3.0 Vdc GSA(Q) (V =30Vdc,I =500 mAdc, Measured in FunctionalTest) DD DA Drain--Source On--Voltage V 0.1 0.15 0.3 Vdc DS(on) (V =10Vdc,I =1.4Adc) GS D OnCharacteristics -- SideB,Peaking Gate Threshold Voltage V 0.8 1.2 1.6 Vdc GS(th) (V =10Vdc,I =320 Adc) DS D Drain--Source On--Voltage V 0.1 0.15 0.3 Vdc DS(on) (V =10Vdc,I =3.2Adc) GS D 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at