PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 2200 MHz Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Wolfspeed s advanced LDMOS PTFC210202FC process, this device provides excellent thermal performance and superior Package H-37248-4 reliability. Features Single-carrier WCDMA Drive-up Input matched V = 28 V, I = 170 mA, = 2170 MHz DQ DD 3GPP WCDMA signal, Typical CW performance, 2170 MHz, 28 V, PAR = 7.5 dB, 3.84 MHz BW combined outputs - Output power at P = 28 W 1dB 24 60 - Efficiency = 62% - Gain = 20.9 dB 20 40 Gain Capable of handling 10:1 VSWR 28 V, 28 W (CW) out- put power 16 20 Integrated ESD protection : Human Body Model, Class Efficiency 1C (per JESD22-A114) 12 0 Low thermal resistance 8 -20 Pb-free and RoHS compliant PAR 0.01% CCDF 4 -40 0 -60 ptfc210202fc g1 28 32 36 40 44 Average Output Power (dBm) RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed test fixture) V = 28 V, I = 170 mA, P = 5 W avg, = 2160 MHz, = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, DD DQ OUT 1 2 peak/average = 8 dB 0.01% CCDF Characteristic Symbol Min Typ Max Unit Linear Gain G 20 21 dB ps Drain Efficiency h 26.5 29 % D Adjacent Channel Power Ratio ACPR 31 28 dBc All published data at T = 25C unless otherwise indicated CASE ESD: Electrostatic discharge sensitive deviceobserve handling precautions Rev. 04.1, 2021-03-10 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com Peak/Average Ratio, Gain (dB) Efficiency (%) PTFC210202FC 2 DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V = 0 V, I = 10 mA V( 65 V GS DS BR)DSS Drain Leakage Current V = 28 V, V = 0 V I 0.1 A DS GS DSS V = 63 V, V = 0 V I 1.0 A DS GS DSS Gate Leakage Current V = 10 V, V = 0 V I 1 A GS DS GSS On-State Resistance V = 10 V, V = 0.1 V R 0.05 W GS DS DS(on) Operating Gate Voltage V = 28 V, I = 0.17 V 2.40 2.70 3.05 V DS DQ GS Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V 65 V DSS 6 to +10 V Gate-Source Voltage V GS Operating Voltage V 0 to +32 V DD Junction Temperature T 225 C J Storage Temperature Range T 65 to +150 C STG Thermal Resistance (T = 70C, 25 W CW) R 2.2 C/W CASE qJC Ordering Information Type and Version Order Code Package Description Shipping PTFC210202FC V1 R0 PTFC210202FC-V1-R0 H-37248-4, earless flange Tape & Reel, 50 pcs PTFC210202FC V1 R250 PTFC210202FC-V1-R250 H-37248-4, earless flange Tape & Reel, 250 pcs Rev. 04.1, 2021-03-10 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com