PTFC270101M High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 2700 MHz Description The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency PTFC270101M and linearity performance in a small overmolded plastic package. Package PG-SON-10 Features Two-carrier WCDMA Drive-up V = 28 V, I = 120 mA, = 2170 MHz, DD DQ Unmatched input and output 3GPP WCDMA signal, 8 dB PAR, Typical CW performance, 2170 MHz, 28 V 10 MHz carrier spacing, 3.84 MHz bandwidth - Output power P = 10 W 1dB 23 70 - Gain = 20 dB - Efficiency = 60% 22 60 Gain Typical two-carrier WCDMA performance, 2170 MHz, 28 V, 8 dB PAR 21 50 - Output power = 1.3 W avg 20 40 - Gain = 21 dB - Efficiency = 21% 19 30 - ACPR = 44.9 dBc 5 MHz Capable of handling 10:1 VSWR 28 V, 10 W (CW) 18 20 output power Efficiency 17 10 Integrated ESD protection Pb-free and RoHS compliant 16 c270101m-2.1-gr1c 0 24 26 28 30 32 34 36 38 40 Output Power (dBm) RF Characteristics Two-carrier WCDMA Specifications (tested in Wolfspeed production test fixture) V = 28 V, I = 120 mA, P = 2.4 W avg, = 2170 MHz DD DQ OUT 3GPP WCDMA signal, 3.84 MHz channel bandwidth, 8 dB peak/average 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain G 19.5 20.5 dB ps All published data at T = 25C unless otherwise indicated CASE ESD: Electrostatic discharge sensitive deviceobserve handling precautions Rev. 05.1, 2020-10-15 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com Gain (dB) Drain Efficiency (%)PTFC270101M 2 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V = 0 V, I = 10 mA V( 65 V GS DS BR)DSS Drain Leakage Current V = 28 V, V = 0 V I 1 A DS GS DSS V = 63 V, V = 0 V I 10 A DS GS DSS Gate Leakage Current V = 10 V, V = 0 V I 1 A GS DS GSS On-State Resistance V = 10 V, V = 0.1 V R 1 W GS DS DS(on) Operating Gate Voltage V = 28 V, I = 120 mA V 2.2 2.7 3.2 V DS DQ GS Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V 65 V DSS Gate-Source Voltage V 6 to +10 V GS Operating Voltage V 0 to +32 V DD Junction Temperature T 225 C J Storage Temperature Range T 65 to +150 C STG Thermal Resistance (T = 70C, 12 W CW) R 4.04 C/W CASE qJC Moisture Sensitivity Level Level Test Standard Package Temperature Unit 3 IPC/JEDEC J-STD-020 260 C ESD Ratings Test Type Rated Class Standard Human Body Model (HBM) 1B ANSI/ESDA/JEDEC JS-001 Charge Device Model (CDM) II JESD 22-C101 Ordering Information Type Order Code Package and Description Shipping PTFC270101M V1 R1K PTFC270101M-V1-R1K PG-SON-10, molded plastic, SMD Tape & Reel, 1000 pcs Rev. 05.1, 2020-10-15 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com