DE275X2-102N06A RF Power MOSFET Common Source Push-Pull Pair N-Channel Enhancement Mode Low Q and R V = 1000 V g g DSS High dv/dt I = 16 A Nanosecond Switching D25 R = The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a 0.8 DS(on) common source configuration. The device is optimized for push-pull or paral- P = 1180 W lel operation in RF generators and amplifiers at frequencies to >65 MHz. DC Unless noted, specifications are for each output device Symbol Test Conditions Maximum Ratings T = 25C to 150C J V 1000 V DSS T = 25C to 150C R = 1 M V J GS 1000 V DGR Continuous V 20 V GS Transient V 30 V GSM T = 25C c DRAIN 2 I 16 A DRAIN 1 D25 T = 25C, pulse width limited by T I c JM 48 A DM T = 25C c I 6 A AR GATE 1 GATE 2 T = 25C c E 20 mJ AR I I , di/dt 100A/s, V V , S DM DD DSS 5 V/ns T 150C, R = 0.2 j G dv/dt SG1 SD1 SD2 SG2 Source 1 Source 2 I = 0 S >200 V/ns Features (1) P 1180 W DC Isolated Substrate (1) T = 25C, Derate 5.0W/C above 25C c P 750 W high isolation voltage (>2500V) DHS excellent thermal transfer (1) T = 25C c P 5.0 W DAMB Increased temperature and power cycling capability Symbol Test Conditions Characteristic Values IXYS advanced low Q process g T = 25C unless otherwise specified J Low gate charge and capacitances min. typ. max. easier to drive V = 0 V, I = 3 ma GS D faster switching V 1000 V DSS Low R DS(on) V = V , I = 4 ma V DS GS D 2.5 5.5 V GS(th) Very low insertion inductance (<2nH) V = 20 V , V = 0 GS DC DS No beryllium oxide (BeO) or other I 100 nA GSS hazardous materials V = 0.8 V T = 25C DS DSS J I 50 DSS A V = 0 T = 125C GS J Advantages 1 mA High Performance Push-Pull RF V = 15 V, I = 0.5I GS D D25 R 1.6 DS(on) Package Pulse test, t 300S, duty cycle d 2% Optimized for RF and high speed switching at frequencies to >100MHz V = 15 V, I = 0.5I , pulse test DS D D25 g 2 7.5 S fs Easy to mountno insulators needed (1) R 0.25 C/W thJC High power density (1) R 0.50 C/W thJHS Note: All specifications are per each T -55 +175 C J transistor, unless otherwise noted. (1) T 175 C JM Thermal specifications are for the package, not per transistor T -55 +175 C stg 1.6mm (0.063 in) from case for 10 s T 300 C L Weight 4 g DE275X2-102N06A RF Power MOSFET Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) J min. typ. max. R 0.3 G C 1800 pF iss V = 0 V, V = 0.8 V , GS DS DSS(max) C 130 pF oss f = 1 MHz C 25 pF rss Back Metal to any Pin C 21 pF stray T 3 ns d(on) V = 15 V, V = 0.8 V GS DS DSS T 2 ns on I = 0.5 I D DM T R = 0.2 (External) 4 ns G d(off) T 5 ns off Q 50 nC g(on) V = 10 V, V = 0.5 V Q GS DS DSS 20 nC gs I = 0.5 I D D25 Q 30 nC gd Source-Drain Diode Characteristic Values (T = 25C unless otherwise specified) J Symbol Test Conditions min. typ. max. V = 0 V I GS 6 A S Repetitive pulse width limited by T JM I 96 A SM I = I , V = 0 V, F S GS V 1.5 V SD Pulse test, t 300 s, duty cycle 2% T 200 ns rr I = I , -di/dt = 100A/s, F S Q 0.6 C RM V = 100V R I 4 A RM (1) These parameters apply to the package, not individual MOSFET devices. For detailed device mounting and installation instructions, see the DE- Series MOSFET Mounting Instructions technical note on IXYS RFs web site at www.ixysrf.com/Technical Support/App notes.html IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045