V 1200 V DS I 25C 60 A D C2M0040120D R 40 m DS(on) Silicon Carbide Power MOSFET TM C2M MOSFET Technology N-Channel Enhancement Mode Features Package High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant TO-247-3 Benefits Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Solar Inverters Switch Mode Power Supplies Part Number Package High Voltage DC/DC converters Battery Chargers C2M0040120D TO-247-3 Motor Drives Pulsed Power Applications Maximum Ratings (T = 25 C unless other wise specified) C Symbol Parameter Value Unit Test Conditions Note Drain - Source Voltage 1200 V V = 0 V, I = 100 A V GS D DSmax Gate - Source Voltage -10/+25 V Absolute maximum values V GSmax Gate - Source Voltage -5/+20 V Recommended operational values V GSop 60 Fig. 19 V = 20 V, T = 25C GS C I Continuous Drain Current A D 40 V = 20 V, T = 100C GS C I Pulsed Drain Current 160 A Fig. 22 Pulse width t limited by T D(pulse) jmax P P Power Dissipation 330 W T =25C, T = 150 C Fig. 20 C J D -55 to Operating Junction and Storage Temperature C T , T J stg +150 Solder Temperature 260 C 1.6mm (0.063) from case for 10s T L 1 Nm Mounting Torque M3 or 6-32 screw M d 8.8 lbf-in 1 C2M0040120D Rev. B, 10-2015 Electrical Characteristics (T = 25C unless other wise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V (BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, ID = 100 A 2.0 2.6 4 V V = V , I = 10mA DS GS D V Gate Threshold Voltage Fig. 11 GS(th) 2.1 V V = V I = 10mA,T = 150 C DS GS , D J I Zero Gate Voltage Drain Current 1 100 A V = 1200 V, V = 0 V DSS DS GS IGSS Gate-Source Leakage Current 250 nA VGS = 20 V, VDS = 0 V 40 52 VGS = 20 V, ID = 40 A R Drain-Source On-State Resistance m Fig. 4,5,6 DS(on) 84 V = 20 V, I = 40 A, T = 150 C GS D J 15.1 V = 20 V, I = 40 A DS DS g Transconductance S Fig. 7 fs 13.2 V = 20 V, I = 40 A, T = 150 C DS DS J Ciss Input Capacitance 1893 VGS = 0 V C Output Capacitance 150 oss pF Fig. 17,18 VDS = 1000 V C Reverse Transfer Capacitance 10 rss f = 1 MHz AC V = 25 mV E C Stored Energy 82 J Fig 16 oss oss E Avalanche Energy, Single Pluse 2 J I = 40A, V = 50V Fig. 29 AS D DD E Turn-On Switching Energy 1.0 ON V = 800 V, V = -5/20 V DS GS mJ Fig. 25 I = 40A, R = 2.5, L= 80 H E Turn Off Switching Energy 0.4 D G(ext) OFF t Turn-On Delay Time 15 d(on) VDD = 800 V, VGS = -5/20 V ID = 40 A t Rise Time 52 r ns RG(ext) = 2.5 , R = 20 Fig. 27 L td(off ) Turn-Off Delay Time 26 Timing relative to V DS Per IEC60747-8-4 pg 83 tf Fall Time 34 , R Internal Gate Resistance 1.8 f = 1 MHz V = 25 mV G(int) AC Q Gate to Source Charge 28 gs V = 800 V, V = -5/20 V DS GS Q Gate to Drain Charge 37 nC I = 40 A Fig. 12 gd D Per IEC60747-8-4 pg 21 Qg Total Gate Charge 115 Reverse Diode Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note 3.3 V V = - 5 V, I = 20 A, T = 25 C GS SD J Fig. 8, 9, V Diode Forward Voltage SD 10 3.1 V V = - 5 V, I = 20 A, T = 150 C GS SD J I Continuous Diode Forward Current 60 A T = 25 C Note 1 S C t Reverse Recovery Time 54 ns rr V = - 5 V, I = 40 A T = 25 C GS SD J VR = 800 V Q Reverse Recovery Charge 283 nC Note 1 rr dif/dt = 1000 A/s I Peak Reverse Recovery Current 15 A rrm Note (1): When using SiC Body Diode the maximum recommended V = -5V GS Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note R Thermal Resistance from Junction to Case 0.34 0.38 JC C/W Fig. 21 R Thermal Resistance from Junction to Ambient 40 JC 2 C2M0040120D Rev. B, 10-2015