NTHS5441T1G ON Semiconductor

M A3 NTHS5441 MOSFET Power, P-Channel, ChipFET -20 V, -5.3 A Features NTHS5441 THERMAL CHARACTERISTICS Characteristic Symbol Typ Max Unit Maximum JunctiontoAmbient (Note 2) R C/W JA 40 50 t 5 sec 80 95 Steady State Maximum JunctiontoFoot (Drain) R 15 20 C/W JF Steady State ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage V V = V , I = 250 A 0.6 1.2 V GS(th) DS GS D GateBody Leakage I V = 0 V, V = 12 V 100 nA GSS DS GS Zero Gate Voltage Drain Current I V = 16 V, V = 0 V 1.0 A DSS DS GS V = 16 V, V = 0 V, 5.0 DS GS T = 85C J OnState Drain Current (Note 3) I V 5.0 V, V = 4.5 V 20 A D(on) DS GS DrainSource OnState Resistance (Note 3) r V = 3.6 V, I = 3.7 A 0.050 0.06 DS(on) GS D V = 4.5 V, I = 3.9 A 0.046 GS D V = 2.5 V, I = 3.1 A 0.070 0.083 GS D Forward Transconductance (Note 3) g V = 10 V, I = 3.9 A 12 mhos fs DS D Diode Forward Voltage (Note 3) V I = 2.1 A, V = 0 V 0.8 1.2 V SD S GS Dynamic (Note 4) Total Gate Charge Q 9.7 22 nC G V = 10 V, V = 4.5 V, DS GS GateSource Charge Q 1.2 GS I = 3.9 A D GateDrain Charge Q 3.6 GD Input Capacitance C 710 pF iss V = 5.0 Vdc, V = 0 Vdc, DS GS Output Capacitance C 400 oss f = 1.0 MHz Reverse Transfer Capacitance C 140 rss TurnOn Delay Time t 14 30 ns d(on) V = 10 V, R = 10 Rise Time t DD L 22 55 r I 1.0 A, V = 4.5 V, D GEN TurnOff Delay Time t 42 100 R = 6 d(off) G Fall Time t 35 70 f SourceDrain Reverse Recovery Time t I = 1.1 A, di/dt = 100 A/ s 30 60 rr F 2. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq 1 oz including traces). 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Guaranteed by design, not subject to production testing.