NTJD1155L MOSFET Power, P-Channel, High Side Load Switch with Level-Shift, SC-88 www.onsemi.com 8 V, 1.3 A The NTJD1155L integrates a P and NChannel MOSFET in a single V R TYP I MAX (BR)DSS DS(on) D package. This device is particularly suited for portable electronic 130 m 4.5 V equipment where low control signals, low battery voltages and high 8.0 V 170 m 2.5 V 1.3 A load currents are needed. The PChannel device is specifically 260 m 1.8 V designed as a load switch using ON Semiconductor stateoftheart trench technology. The NChannel, with an external resistor (R1), SIMPLIFIED SCHEMATIC functions as a levelshift to drive the PChannel. The NChannel MOSFET has internal ESD protection and can be driven by logic 4 2,3 signals as low as 1.5 V. The NTJD1155L operates on supply lines from Q2 1.8 to 8.0 V and can drive loads up to 1.3 A with 8.0 V applied to both V and V 6 IN ON/OFF. Features Q1 Extremely Low R PChannel Load Switch MOSFET DS(on) 5 Level Shift MOSFET is ESD Protected Low Profile, Small Footprint Package 1 V Range 1.8 to 8.0 V IN MARKING ON/OFF Range 1.5 to 8.0 V SC88 DIAGRAM These Devices are PbFree and are RoHS Compliant (SOT363) 1 CASE 419B STYLE 30 TB M MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit TB = Device Code M = Date Code 1 Input Voltage (V , PCh) V 8.0 V DSS IN = PbFree Package ON/OFF Voltage (V , NCh) V 8.0 V GS ON/OFF (Note: Microdot may be in either location) Continuous Load Current Steady T = 25C I 1.3 A A L (Note 1) State PIN ASSIGNMENT T = 85C 0.9 A D1/G2 G1 S2 Power Dissipation Steady T = 25C P 0.40 W A D 6 5 4 (Note 1) State T = 85C 0.20 A Pulsed Load Current t = 10 s I 3.9 A p LM Operating Junction and Storage Temperature T , 55 to C J T 150 STG 1 2 3 Source Current (Body Diode) I 0.4 A S S1 D2 D2 Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) ORDERING INFORMATION THERMAL CHARACTERISTICS Device Package Shipping Characteristic Symbol Max Unit JunctiontoAmbient Steady State (Note 1) R 320 C/W NTJD1155LT1G, SC88 3000/Tape & Reel JA NTJD1155LT2G (PbFree) JunctiontoFoot Steady State (Note 1) 220 R JF For information on tape and reel specifications, Stresses exceeding those listed in the Maximum Ratings table may damage the including part orientation and tape sizes, please device. If any of these limits are exceeded, device functionality should not be refer to our Tape and Reel Packaging Specification assumed, damage may occur and reliability may be affected. Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: May, 2019 Rev. 6 NTJD1155L/DNTJD1155L 1. Surfacemounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq 1 oz including traces). www.onsemi.com 2