X-On Electronics has gained recognition as a prominent supplier of NTJD5121NT2G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTJD5121NT2G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTJD5121NT2G ON Semiconductor

NTJD5121NT2G electronic component of ON Semiconductor
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Part No.NTJD5121NT2G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: ON Semiconductor MOSFET NFET SC88D 60V 295mA
Datasheet: NTJD5121NT2G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5650: USD 0.0863 ea
Line Total: USD 487.6 
Availability - 0
MOQ: 5650  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0837
6000 : USD 0.083
9000 : USD 0.0782
24000 : USD 0.0746
30000 : USD 0.0738
75000 : USD 0.0702

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 12000
Multiples : 12000
12000 : USD 0.0757

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 5556
Multiples : 5556
5556 : USD 0.0781

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.9947
10 : USD 0.7535
100 : USD 0.188
500 : USD 0.1283
1000 : USD 0.0985
3000 : USD 0.0835
9000 : USD 0.0756
24000 : USD 0.0706
45000 : USD 0.0667

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 5650
Multiples : 1
5650 : USD 0.0863

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1026
6000 : USD 0.1002
9000 : USD 0.0888
24000 : USD 0.0819
30000 : USD 0.0811
75000 : USD 0.0745
150000 : USD 0.0716

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTJD5121NT2G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTJD5121NT2G and other electronic components in the MOSFETs category and beyond.

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NTJD5121N, NVJD5121N MOSFET Power, Dual, N-Channel With ESD Protection, SC-88 60 V, 295 mA wwwwww..onsemi.comonsemi.com Features Low R DS(on) V R MAX I Max (BR)DSS DS(on) D Low Gate Threshold 1.6 10 V Low Input Capacitance 295 mA 60 V 2.5 4.5 V ESD Protected Gate NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and SC88 (SOT363) PPAP Capable This is a PbFree Device S 1 6 D 1 1 Applications Low Side Load Switch G 2 5 G 1 2 DCDC Converters (Buck and Boost Circuits) MAXIMUM RATINGS (T = 25C unless otherwise stated) J D 3 4 S 2 2 Parameter Symbol Value Unit DraintoSource Voltage V 60 V DSS Top View GatetoSource Voltage V 20 V GS Continuous Drain Steady T = 25C I 295 mA MARKING DIAGRAM & A D Current (Note 1) State PIN ASSIGNMENT T = 85C 212 A D1 G2 S2 t 5 s T = 25C 304 A 6 1 T = 85C 219 A XX M SC88/SOT363 Power Dissipation Steady T = 25C P 250 mW A D CASE 419B (Note 1) State STYLE 26 1 t 5 s 266 S1 G1 D2 Pulsed Drain Current t = 10 s I 900 mA p DM XX = Device Code M = Date Code Operating Junction and Storage Temperature T , T 55 to C J STG 150 = PbFree Package (Note: Microdot may be in either location) Source Current (Body Diode) I 210 mA S Lead Temperature for Soldering Purposes 260 C T L ORDERING INFORMATION (1/8 from case for 10 s) See detailed ordering and shipping information ion page 6 of GateSource ESD Rating (HBM) ESD 2000 V HBM this data sheet. GateSource ESD Rating (MM) ESD 200 V MM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2019 Rev. 9 NTJD5121N/DNTJD5121N, NVJD5121N Parameter Symbol Value Unit C/W JunctiontoAmbient Steady State R 467 JA JunctiontoAmbient t 5 s R 412 JA JunctiontoLead Steady State R 252 JL 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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